Electroluminescent wavelength shift of Si-rich SiOx based blue and green MOSLEDs induced by O/Si composition Si-QD size variations

Optical Materials Express

Volumn 3, Issue 2, 2013, Pages 166-175

  Lai, Bo Han ^a   Cheng, Chih Hsien ^a   Lin, Gong Ru ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; BLUE SHIFT; BLUE-SHIFTED; COLOR SHIFTS; COMPOSITION RATIO; CURRENT INCREASE; DEPOSITION TIME; DETUNED; DIFFUSION LENGTH; ELECTRO-LUMINESCENT; ELECTRON CONDUCTIVITY; INJECTED CARRIERS; METAL-OXIDE-SEMICONDUCTOR LIGHT-EMITTING DIODES; OXYGEN CONTENT; PEAK WAVELENGTH; RED-SHIFTED; RF PLASMA; RF PLASMA POWER; SI ATOMS; SILICON QUANTUM DOTS; SIZE VARIATION; WAVELENGTH SHIFT;

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; PHOTODEGRADATION; PLASMA THEORY; SILICON; SILICON OXIDES; WAVE PLASMA INTERACTIONS; WAVELENGTH;

SEMICONDUCTING SILICON;

EID: 84874136516     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.000166     Document Type: Article

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