Photoluminescence mechanisms in silicon quantum dots embedded in nanometric chlorinated-silicon nitride films

Journal of Luminescence

Volumn 132, Issue 9, 2012, Pages 2385-2389

  Rodriguez, A ^a   Arenas, J ^a   Alonso, J C ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

Photoluminescence; Quantum dots; Silicon

Indexed keywords

BLUE-SHIFTED; ELECTRON HOLE; ELECTRONS AND HOLES; NANOMETRICS; NANOSTRUCTURED FILMS; NITRIDE FILMS; OPTICAL ABSORPTION EDGE; PHOTOLUMINESCENCE MECHANISM; PL MECHANISM; QUANTUM CONFINEMENT EFFECTS; RADIATIVE RECOMBINATION; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; SILICON QUANTUM DOTS; STOKES SHIFT;

CHEMICAL VAPOR DEPOSITION; CONDUCTION BANDS; ELECTROMAGNETIC WAVE ABSORPTION; PHOTOEXCITATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE;

SILICON;

EID: 84860643058     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.04.007     Document Type: Article

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