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Volumn 96, Issue 5, 2004, Pages 3025-3027

Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate

(3) Lin, Gong Ru a Lin, Chun Jung a Yu, Kuo Chen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; ELECTRIC POTENTIAL; EXTRAPOLATION; HOLE TRAPS; ION IMPLANTATION; IRRADIATION; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL);

NANOCRYSTALS; NEUTRAL OXYGEN VACANCY (NOV); ROOM TEMPERATURE; THERMAL OXIDATION;

SILICA;

EID: 5044232551 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1775041 Document Type: Article

Times cited : (55)

References (12)

1
- 0000867403
- S. Guha, J. Appl. Phys. 84, 5210 (1998).
- (1998) J. Appl. Phys. , vol.84 , pp. 5210
- Guha, S.¹

2
- 0036536664
- H. S. Bae, T. O. Kim, C. N. Whang, S. Im, J. S. Yun, and J. H. Song, J. Appl. Phys. 91, 4078 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 4078
- Bae, H.S.¹ Kim, T.O.² Whang, C.N.³ Im, S.⁴ Yun, J.S.⁵ Song, J.H.⁶

3
- 15744369033
- H. Nishikawa, R. Nakamura, and J. H. Stathis, Phys. Rev. B 60, 15910 (1999).
- (1999) Phys. Rev. B , vol.60 , pp. 15910
- Nishikawa, H.¹ Nakamura, R.² Stathis, J.H.³

4
- 79956026800
- M. Lopez, B. Garrido, C. Garcia, P. Pellegrino, A. Perez-Rodriguez, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, Appl. Phys. Lett. 80, 1637 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1637
- Lopez, M.¹ Garrido, B.² Garcia, C.³ Pellegrino, P.⁴ Perez-Rodriguez, A.⁵ Morante, J.R.⁶ Bonafos, C.⁷ Carrada, M.⁸ Claverie, A.⁹

5
- 0347877387
- J. Kudrna, P. Maly, F. Trojanek, I. Pelant, J. Kocka, A. Poruba, S. Surendran, and J. Jiricka, J. Lumin. 80, 435 (1999).
- (1999) J. Lumin. , vol.80 , pp. 435
- Kudrna, J.¹ Maly, P.² Trojanek, F.³ Pelant, I.⁴ Kocka, J.⁵ Poruba, A.⁶ Surendran, S.⁷ Jiricka, J.⁸

6
- 0001638611
- R. Tohmon, Y. Shimogaichi, H. Mizuno, Y. Ohki, K. Nagasawa, and Y. Hama, Phys. Rev. Lett. 62, 1388 (1989).
- (1989) Phys. Rev. Lett. , vol.62 , pp. 1388
- Tohmon, R.¹ Shimogaichi, Y.² Mizuno, H.³ Ohki, Y.⁴ Nagasawa, K.⁵ Hama, Y.⁶

7
- 0029346366
- H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, J. Appl. Phys. 78, 842 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 842
- Nishikawa, H.¹ Watanabe, E.² Ito, D.³ Takiyama, M.⁴ Ieki, A.⁵ Ohki, Y.⁶

8
- 0035302590
- J. C. Cheang-Wong, A. Oliver, J. Roiz, J. M. Hernandez, L. Rodrigues-Fernandez, J. G. Morales, and A. Crespo-Sosa, Nucl. Instrum. Methods Phys. Res. B 175-177, 490 (2001).
- (2001) Nucl. Instrum. Methods Phys. Res. B , vol.175-177 , pp. 490
- Cheang-Wong, J.C.¹ Oliver, A.² Roiz, J.³ Hernandez, J.M.⁴ Rodrigues-Fernandez, L.⁵ Morales, J.G.⁶ Crespo-Sosa, A.⁷

9
- 49549158861
- F. J. Feigl, W. B. Fowler, and K. L. Yip, Solid State Commun. 14, 225 (1974).
- (1974) Solid State Commun. , vol.14 , pp. 225
- Feigl, F.J.¹ Fowler, W.B.² Yip, K.L.³

10
- 0001459245
- H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
- (1993) Phys. Rev. B , vol.48 , pp. 15584
- Nishikawa, H.¹ Nakamura, R.² Ohki, Y.³ Hama, Y.⁴

11
- 0000971016
- H. Nishikawa, T. Shiroyama, R. Nakamura, Y. Ohki, K. Nagasawa, and Y. Hama, Phys. Rev. B 45, 586 (1992).
- (1992) Phys. Rev. B , vol.45 , pp. 586
- Nishikawa, H.¹ Shiroyama, T.² Nakamura, R.³ Ohki, Y.⁴ Nagasawa, K.⁵ Hama, Y.⁶

12
- 0037429816
- C. Garcia, B. Garrido, P. Pellegrino, R. Ferre, J. A. Moreno, J. R. Morante, L. Pavesi, and M. Cazzanelli, Appl. Phys. Lett. 82, 1595 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1595
- Garcia, C.¹ Garrido, B.² Pellegrino, P.³ Ferre, R.⁴ Moreno, J.A.⁵ Morante, J.R.⁶ Pavesi, L.⁷ Cazzanelli, M.⁸

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