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Volumn 102, Issue 5, 2013, Pages

800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

(10) Nowozin, T a Bonato, L a Hogner A a Wiengarten, A a Bimberg, D a,d Lin, Wei Hsun b Lin, Shih Yen b Reyner, C J c Liang, Baolai L c Huffaker, D L c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c UNIVERSITY OF CALIFORNIA (United States)

d KING ABDULAZIZ UNIVERSITY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE MATERIALS; CAPTURE CROSS SECTIONS; CARRIER STORAGE; GASB/GAAS; HOLE LOCALIZATION; LOCALIZATION ENERGY;

ATOMIC FORCE MICROSCOPY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84874039268 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4791678 Document Type: Article

Times cited : (41)

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