Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Nowozin, T ^a   Marent, A ^a   Geller, M ^a,c   Bimberg, D ^a   Akay N ^b   Oncan N ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b ISTANBUL UNIVERSITY   (Turkey)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; GALLIUM ALLOYS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

CAPACITANCE-VOLTAGE SPECTROSCOPIES; CARRIER EMISSIONS; ELECTRIC-FIELD DEPENDENCES; EMISSION PROCESS; GAAS; HOLE EMISSIONS; MEMORY STRUCTURES; P-N DIODES; PHONON-ASSISTED TUNNELING; QUANTUM DOTS; SELF-ORGANIZED; THERMAL ACTIVATIONS; TIME CONSTANTS;

EMISSION SPECTROSCOPY;

EID: 59349120990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3076126     Document Type: Article

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