The QD-flash: A quantum dot-based memory device

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Marent, A ^a   Nowozin, T ^a   Geller, M ^a,b   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MEASUREMENTS; DYNAMIC RANDOM ACCESS MEMORY; ELECTRICAL DATA; III-V COMPOUND SEMICONDUCTOR; III-V QUANTUM DOTS; INAS/GAAS; MATRIX; MEMORY DEVICE; MEMORY OPERATIONS; NON-VOLATILE MEMORIES; QUANTUM DOT; RETENTION TIME; SELF-ORGANIZED; SEMICONDUCTOR MEMORY; STORAGE TIME; TIME-RESOLVED; TWO-DIMENSIONAL HOLE GAS;

DRAIN CURRENT; FLASH MEMORY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 79551709335     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014026     Document Type: Article

References (32)

1. Waser R 2003 Nanoelectronics and Information Technology (Berlin: Wiley-VCH)
2. Brewer Joe E and Gill M 2008 Nonvolatile Memory Technologies with Emphasis on Flash (Hoboken, NJ: Wiley)
3. Burr G W, Kurdi B N, Scott J C, Lam C H, Gopalakrishnan K and Shenoy R S 2008 Overview of candidate device technologies for storage-class memory IBM J. Res. Dev. 52 449-64
4. International technology roadmap for semiconductors, emerging research devices 2009 Technical Report, Edition
5. Bimberg D, Grundmann M and Ledentsov N N 1998 Quantum Dot Heterostructures (Chichester: Wiley)
6. Muller T, Schrey F F, Strasser G and Unterrainer K 2003 Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots Appl. Phys. Lett. 83 3572-4
7. Geller M, Marent A, Stock E, Bimberg D, Zubkov V I, Shulgunova I S and Solomonov A V 2006 Hole capture into self-organized InGaAs quantum dots Appl. Phys. Lett. 89 232105
8. Geller M, Marent A and Bimberg D 2006 Speicherzelle und Verfahren zum Speichern von Daten German Patent Application No 10 2006 059 110.0, 27.10
9. Stier O, Grundmann M and Bimberg D 1999 Electronic and optical properties of strained quantum dots modeled by 8-band-k.p theory Phys. Rev. B 59 5688
10. 6 years extrapolated hole storage time in GaSb/AlAs quantum dots Appl. Phys. Lett. 91 242109
11. Marent A, Geller M, Bimberg D, Vasi'ev A P, Semenova E S, Zhukov A E and Ustinov V M 2006 Carrier storage time of milliseconds at room temperature in self-organized quantum dots Appl. Phys. Lett. 89 072103
12. Vincent G, Chantre A and Bois D 1979 Electric field effect on the thermal emission of traps in semiconductor junctions J. Appl. Phys. 50 5484
13. Chang W H, Chen W Y, Hsu T M, Yeh N T and Chyi J I 2002 Hole emission processes in InAs/GaAs self-assembled quantum dots Phys. Rev. B 66 195337
14. Geller M, Marent A, Nowozin T, Bimberg D, Akcay N and Ö ncan N 2008 A write time of 6 ns for quantum dot-based memory structures Appl. Phys. Lett. 92 092108
15. Geller M, Stock E, Kapteyn C, Sellin R L and Bimberg D 2006 Tunneling emission from self-organized In(Aa)As/GaAs quantum dots observed via time-resolved capacitance measurements Phys. Rev. B 73 205331
16. Geller M, Kapteyn C, Müller-Kirsch L, Heitz R and Bimberg D 2003 450mev hole localization energy in GaSb/GaAs quantum dots Appl. Phys. Lett. 82 2706-8
17. Kapteyn C M A, Lion M, Heitz R, Bimberg D, Miesner C, Asperger T and Abstreiter G 2000 Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy Appl. Phys. Lett. 77 4169
18. Lang D V 1974 Deep-level transient spectroscopy: a new method to characterize traps in semiconductors J. Appl. Phys. 45 3023
19. Schliwa A, Winkelnkemper M and Bimberg D 2007 Impact of size, shape and composition on piezoelectric effects and electronic properties of In(Ga)As/GaAs quantum dots Phys. Rev. B 76 17
20. (Pubitemid 33600604)
21. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 Band parameters for III-V compound semiconductors and their alloys J. Appl. Phys. 89 5815-75 (Pubitemid 33599303)
22. Batey J and Wright S L 1986 Energy band alignment in GaAs: (Al, Ga) as heterostructures: the dependence on alloy composition J. Appl. Phys. 59 200-9
23. Marent A, Nowozin T, Gelze J, Luckert F and Bimberg D 2009 Hole-based memory operation in an InAs/GaAs quantum dot heterostructure App. Phys. Lett. 95 242114
24. Dingle R, Störmer H L, Gossard A C and Wiegmann W 1978 Electron mobilities in modulation-doped semiconductor heterojunction super-lattices App. Phys. Lett. 33 665-7
25. Russ M, Meier C, Marquardt B, Lorke A, Reuter D and Wieck A D 2006 Quantum dot electrons as controllable scattering centers in the vicinity of a two-dimensional electron gas Phase Transit. 79 765-70 (Pubitemid 46005296)
26. Marquardt B, Geller M, Lorke A, Reuter D and Wieck A D 2009 Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots Appl. Phys. Lett. 95 022113
27. Russ M, Meier C, Lorke A, Reuter D and Wieck A D 2006 Role of quantum capacitance in coupled low-dimensional electron systems Phys. Rev. B 73 115334
28. Rack A, Wetzler R, Wacker A and Scholl E 2002 Dynamical bistability in quantum-dot structures: role of auger processes Phys. Rev. B 66 165429
29. Balocco C, Song A M and Missous M 2004 Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures Appl. Phys. Lett. 85 5911-3 (Pubitemid 40817937)
30. Nowozin T, Marent A, Geller M, Bimberg D, Akcay N and Öncan N 2009 Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure Appl. Phys. Lett. 94 042108
31. Brewer J E, Zhirnov V V and Hutchby J A 2005 Memory technology from the post CMOS era IEEE Circuits Devices 21 13-20
32. Pavan P, Bez R, Olivo P and Zanoni E 1997 Flash memory cells-an overview Proc. IEEE 85 1248-71 (Pubitemid 127748129)