Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

  Lin, Shih Yen ^a,b,c   Tseng, Chi Che ^a   Lin, Wei Hsun ^a   Mai, Shu Cheng ^a   Wu, Shung Yi ^a   Chen, Shu Han ^a   Chyi, Jen Inn ^a,d  

^a RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c Institute of Optoelectronic Sciences   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DIPOLE TRANSITION; EXCITATION POWER DENSITY; FORWARD BIAS; GASB/GAAS; HETEROSTRUCTURES; INFRARED LIGHT-EMITTING DIODES; OPERATION MECHANISM; QUANTUM DOTS; ROOM-TEMPERATURE OPERATION; ROOM-TEMPERATURE PHOTOLUMINESCENCE;

ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77950337004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3371803     Document Type: Article

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