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Volumn 68, Issue 25, 1996, Pages 3614-3616

Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures

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EID: 5444267048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115747     Document Type: Article
Times cited : (155)

References (21)
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    • S. Fafard, R. Leon, D. Leonard, J. L. Merz, and P. M. Petroff, Phys. Rev. B 52, 5752 (1995), and references therein.
  • 7
    • 21544462699 scopus 로고    scopus 로고
    • R. Heitz, M. Grundamnn, N. N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, Appl. Phys. Lett. 68 (1996), and references therein.
    • R. Heitz, M. Grundamnn, N. N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, Appl. Phys. Lett. 68 (1996), and references therein.
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    • L. Samuelson, N. Carlsson, P. Castrillo, A. Gustafsson, D. Hessman, J. Lindahl, L. Montelius, A. Petersson, M.-E. Pistol, and W. Seifert, Jpn. J. Appl. Phys. 34, 4392 (1995); M.-E. Pistol, N. Carlsson, C. Persson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. 67, 1438 (1995).
    • L. Samuelson, N. Carlsson, P. Castrillo, A. Gustafsson, D. Hessman, J. Lindahl, L. Montelius, A. Petersson, M.-E. Pistol, and W. Seifert, Jpn. J. Appl. Phys. 34, 4392 (1995); M.-E. Pistol, N. Carlsson, C. Persson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. 67, 1438 (1995).
  • 10
    • 0029305676 scopus 로고    scopus 로고
    • Y. Watanabe, F. Maeda, and M. Oshima, J. Cryst. Growth 150, 863 (1995), and references therein.
    • Y. Watanabe, F. Maeda, and M. Oshima, J. Cryst. Growth 150, 863 (1995), and references therein.
  • 11
    • 36449004131 scopus 로고    scopus 로고
    • B. R. Bennett, R. Magno, and B. V. Shanabrook, Appl. Phys. Lett. 68, 505 (1996); B. R. Bennett, R. Magno, B. V. Shanabrook, and M. E. Twigg, J. Electron. Mater. 24, A19 (1995).
    • B. R. Bennett, R. Magno, and B. V. Shanabrook, Appl. Phys. Lett. 68, 505 (1996); B. R. Bennett, R. Magno, B. V. Shanabrook, and M. E. Twigg, J. Electron. Mater. 24, A19 (1995).
  • 14
    • 21544445997 scopus 로고    scopus 로고
    • We found that the minimum number of monolayers required to produce InSb QDs on GaAs (∼1.5 ML) was less than the corresponding number needed for GaSb or AlSb QD formation (∼3 ML).
    • We found that the minimum number of monolayers required to produce InSb QDs on GaAs (∼1.5 ML) was less than the corresponding number needed for GaSb or AlSb QD formation (∼3 ML).
  • 15
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    • The InAs coverage of 3 ML is above the 2D to 3D transition (1-2 ML) and approximately equal to the thickness at which dislocations begin to form. See, for example, J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
    • The InAs coverage of 3 ML is above the 2D to 3D transition (1-2 ML) and approximately equal to the thickness at which dislocations begin to form. See, for example, J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
  • 20
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    • note
    • InAs=0.072/3 are the strains within the quantum dots. The pre-factor 1/3 arises from taking the shape of the dots as approximately spherical (see Ref. 18).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.