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B. R. Bennett, R. Magno, and B. V. Shanabrook, Appl. Phys. Lett. 68, 505 (1996); B. R. Bennett, R. Magno, B. V. Shanabrook, and M. E. Twigg, J. Electron. Mater. 24, A19 (1995).
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13
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14
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21544445997
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We found that the minimum number of monolayers required to produce InSb QDs on GaAs (∼1.5 ML) was less than the corresponding number needed for GaSb or AlSb QD formation (∼3 ML).
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We found that the minimum number of monolayers required to produce InSb QDs on GaAs (∼1.5 ML) was less than the corresponding number needed for GaSb or AlSb QD formation (∼3 ML).
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15
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25044447375
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The InAs coverage of 3 ML is above the 2D to 3D transition (1-2 ML) and approximately equal to the thickness at which dislocations begin to form. See, for example, J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
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The InAs coverage of 3 ML is above the 2D to 3D transition (1-2 ML) and approximately equal to the thickness at which dislocations begin to form. See, for example, J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. Andre, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994).
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16
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Shanabrook, B.V.6
Whitman, L.J.7
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17
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0026995893
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See, for example
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See, for example, R. Teissier, R. Planel, and F. Mollot, Superlattices Microstruct. INS 12, 539 (1992).
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Planel, R.2
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20
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21544478310
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note
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InAs=0.072/3 are the strains within the quantum dots. The pre-factor 1/3 arises from taking the shape of the dots as approximately spherical (see Ref. 18).
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