SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

(5) Marent, A a Nowozin, T a Gelze, J a Luckert, F a Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL DATA; GATE VOLTAGES; HETEROSTRUCTURES; INAS/GAAS; MEMORY OPERATIONS; MEMORY STRUCTURE; QUANTUM DOT; QUANTUM DOTS; TIME-RESOLVED; TWO-DIMENSIONAL HOLE GAS;

SEMICONDUCTOR QUANTUM DOTS;

DRAIN CURRENT;

EID: 77956157885 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3275758 Document Type: Article

Times cited : (37)

References (25)

1
- 0031212918
- IEEPAD 0018-9219,. 10.1109/5.622505
- P. Pavan, R. Bez, P. Olivo, and E. Zanoni, Proc. IEEE IEEPAD 0018-9219 85, 1248 (1997). 10.1109/5.622505
- (1997) Proc. IEEE , vol.85 , pp. 1248
- Pavan, P.¹ Bez, R.² Olivo, P.³ Zanoni, E.⁴

2
- 1242335725
- (Wiley, Weinheim).
- R. Waser, Nanoelectronics and Information Technology (Wiley, Weinheim, 2003).
- (2003) Nanoelectronics and Information Technology
- Waser, R.¹

3
- 55449122987
- IBMJAE 0018-8646.
- G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, and R. S. Shenoy, IBM J. Res. Dev. IBMJAE 0018-8646 52, 449 (2008).
- (2008) IBM J. Res. Dev. , vol.52 , pp. 449
- Burr, G.W.¹ Kurdi, B.N.² Scott, J.C.³ Lam, C.H.⁴ Gopalakrishnan, K.⁵ Shenoy, R.S.⁶

4
- 0000843969
- Electrical detection of optically induced charge storage in self-assembled InAs quantum dots
- DOI 10.1063/1.122524, PII S0003695198017446
- J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. APPLAB 0003-6951 73, 2618 (1998). 10.1063/1.122524 (Pubitemid 128674015)
- (1998) Applied Physics Letters , vol.73 , Issue.18 , pp. 2618-2620
- Finley, J.J.¹ Skalitz, M.² Arzberger, M.³ Zrenner, A.⁴ Bohm, G.⁵ Abstreiter, G.⁶

5
- 0000600589
- APPLAB 0003-6951,. 10.1063/1.126065
- K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano, Appl. Phys. Lett. APPLAB 0003-6951 76, 1464 (2000). 10.1063/1.126065
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1464
- Koike, K.¹ Saitoh, K.² Li, S.³ Sasa, S.⁴ Inoue, M.⁵ Yano, M.⁶

6
- 0035796722
- APPLAB 0003-6951,. 10.1063/1.1382628
- H. Pettersson, L. Baath, N. Carlson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. APPLAB 0003-6951 79, 78 (2001). 10.1063/1.1382628
- (2001) Appl. Phys. Lett. , vol.79 , pp. 78
- Pettersson, H.¹ Baath, L.² Carlson, N.³ Seifert, W.⁴ Samuelson, L.⁵

7
- 20444474174
- Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures
- DOI 10.1063/1.1831558
- C. Balocco, A. M. Song, and M. Missous, Appl. Phys. Lett. APPLAB 0003-6951 85, 5911 (2004). 10.1063/1.1831558 (Pubitemid 40817937)
- (2004) Applied Physics Letters , vol.85 , Issue.24 , pp. 5911-5913
- Balocco, C.¹ Song, A.M.² Missous, M.³

8
- 27644433163
- Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy
- DOI 10.1063/1.2120905, 193103
- D. Nataraj, N. Ooike, J. Motohisa, and T. Fukui, Appl. Phys. Lett. APPLAB 0003-6951 87, 193103 (2005). 10.1063/1.2120905 (Pubitemid 41567668)
- (2005) Applied Physics Letters , vol.87 , Issue.19 , pp. 1-3
- Nataraj, D.¹ Ooike, N.² Motohisa, J.³ Fukui, T.⁴

9
- 49749123927
- APPLAB 0003-6951,. 10.1063/1.2967880
- C. R. Müller, L. Worschech, J. Heinrich, S. Höfling, and A. Forchel, Appl. Phys. Lett. APPLAB 0003-6951 93, 063502 (2008). 10.1063/1.2967880
- (2008) Appl. Phys. Lett. , vol.93 , pp. 063502
- Müller, C.R.¹ Worschech, L.² Heinrich, J.³ Höfling, S.⁴ Forchel, A.⁵

10
- 77956149053
- German Patent Application No. 10 2006 059 110.0 (pending).
- M. Geller, A. Marent, and D. Bimberg, German Patent Application No. 10 2006 059 110.0 (pending).
- Geller, M.¹ Marent, A.² Bimberg, D.³

11
- 40549087294
- A write time of 6 ns for quantum dot-based memory structures
- DOI 10.1063/1.2890731
- M. Geller, A. Marent, T. Nowozin, D. Bimberg, N. Akcay, and N. Oncan, Appl. Phys. Lett. APPLAB 0003-6951 92, 092108 (2008). 10.1063/1.2890731 (Pubitemid 351357388)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 092108
- Geller, M.¹ Marent, A.² Nowozin, T.³ Bimberg, D.⁴ Akay, N.⁵ Oncan, N.⁶

12
- 0001089438
- PRBMDO 0163-1829,. 10.1103/PhysRevB.59.5688
- O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 59, 5688 (1999). 10.1103/PhysRevB.59.5688
- (1999) Phys. Rev. B , vol.59 , pp. 5688
- Stier, O.¹ Grundmann, M.² Bimberg, D.³

13
- 70349442036
- PRBMDO 0163-1829,. 10.1103/PhysRevB.79.075443
- A. Schliwa, M. Winkelnkemper, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 79, 075443 (2009). 10.1103/PhysRevB.79.075443
- (2009) Phys. Rev. B , vol.79 , pp. 075443
- Schliwa, A.¹ Winkelnkemper, M.² Bimberg, D.³

14
- 37149025956
- 106 years extrapolated hole storage time in GaSbAlAs quantum dots
- DOI 10.1063/1.2824884
- A. Marent, M. Geller, A. Schliwa, D. Feise, K. Pötschke, D. Bimberg, N. Akcay, and N. Öncan, Appl. Phys. Lett. APPLAB 0003-6951 91, 242109 (2007). 10.1063/1.2824884 (Pubitemid 350262010)
- (2007) Applied Physics Letters , vol.91 , Issue.24 , pp. 242109
- Marent, A.¹ Geller, M.² Schliwa, A.³ Feise, D.⁴ Potschke, K.⁵ Bimberg, D.⁶ Akcay, N.⁷ Oncan, N.⁸

15
- 33747509668
- Carrier storage time of milliseconds at room temperature in self-organized quantum dots
- DOI 10.1063/1.2337000
- A. Marent, M. Geller, D. Bimberg, A. P. Vasi'ev, E. S. Semenova, A. E. Zhukov, and V. M. Ustinov, Appl. Phys. Lett. APPLAB 0003-6951 89, 072103 (2006). 10.1063/1.2337000 (Pubitemid 44259939)
- (2006) Applied Physics Letters , vol.89 , Issue.7 , pp. 072103
- Marent, A.¹ Geller, M.² Bimberg, D.³ Vasi'ev, A.P.⁴ Semenova, E.S.⁵ Zhukov, A.E.⁶ Ustinov, V.M.⁷

16
- 33845397689
- Hole capture into self-organized InGaAs quantum dots
- DOI 10.1063/1.2400059
- M. Geller, A. Marent, E. Stock, D. Bimberg, V. I. Zubkov, I. S. Shulgunova, and A. V. Solomonov, Appl. Phys. Lett. APPLAB 0003-6951 89, 232105 (2006). 10.1063/1.2400059 (Pubitemid 44907246)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232105
- Geller, M.¹ Marent, A.² Stock, E.³ Bimberg, D.⁴ Zubkov, V.I.⁵ Shulgunova, I.S.⁶ Solomonov, A.V.⁷

17
- 0018506275
- JAPIAU 0021-8979,. 10.1063/1.326601
- G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. JAPIAU 0021-8979 50, 5484 (1979). 10.1063/1.326601
- (1979) J. Appl. Phys. , vol.50 , pp. 5484
- Vincent, G.¹ Chantre, A.² Bois, D.³

18
- 0037113640
- PRBMDO 0163-1829,. 10.1103/PhysRevB.66.195337
- W. H. Chang, W. Y. Chen, T. M. Hsu, N. T. Yeh, and J. I. Chyi, Phys. Rev. B PRBMDO 0163-1829 66, 195337 (2002). 10.1103/PhysRevB.66.195337
- (2002) Phys. Rev. B , vol.66 , pp. 195337
- Chang, W.H.¹ Chen, W.Y.² Hsu, T.M.³ Yeh, N.T.⁴ Chyi, J.I.⁵

19
- 36749106768
- APPLAB 0003-6951,. 10.1063/1.90457
- R. Dingle, H. L. Störmer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. APPLAB 0003-6951 33, 665 (1978). 10.1063/1.90457
- (1978) Appl. Phys. Lett. , vol.33 , pp. 665
- Dingle, R.¹ Störmer, H.L.² Gossard, A.C.³ Wiegmann, W.⁴

20
- 33845743906
- PHTRDP 0141-1594,. 10.1080/01411590600960893
- M. Russ, C. Meier, B. Marquardt, A. Lorke, D. Reuter, and A. D. Wieck, Phase Transitions PHTRDP 0141-1594 79, 765 (2006). 10.1080/01411590600960893
- (2006) Phase Transitions , vol.79 , pp. 765
- Russ, M.¹ Meier, C.² Marquardt, B.³ Lorke, A.⁴ Reuter, D.⁵ Wieck, A.D.⁶

21
- 67650770295
- APPLAB 0003-6951,. 10.1063/1.3175724
- B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, Appl. Phys. Lett. APPLAB 0003-6951 95, 022113 (2009). 10.1063/1.3175724
- (2009) Appl. Phys. Lett. , vol.95 , pp. 022113
- Marquardt, B.¹ Geller, M.² Lorke, A.³ Reuter, D.⁴ Wieck, A.D.⁵

22
- 33645291498
- PRBMDO 0163-1829,. 10.1103/PhysRevB.73.115334
- M. Ruβ, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, Phys. Rev. B PRBMDO 0163-1829 73, 115334 (2006). 10.1103/PhysRevB.73.115334
- (2006) Phys. Rev. B , vol.73 , pp. 115334
- Ru, M.¹ Meier, C.² Lorke, A.³ Reuter, D.⁴ Wieck, A.D.⁵

23
- 0344706958
- PRBMDO 0163-1829,. 10.1103/PhysRevB.66.165429
- A. Rack, R. Wetzler, A. Wacker, and E. Schöll, Phys. Rev. B PRBMDO 0163-1829 66, 165429 (2002). 10.1103/PhysRevB.66.165429
- (2002) Phys. Rev. B , vol.66 , pp. 165429
- Rack, A.¹ Wetzler, R.² Wacker, A.³ Schöll, E.⁴

24
- 59349120990
- APPLAB 0003-6951,. 10.1063/1.3076126
- T. Nowozin, A. Marent, M. Geller, D. Bimberg, N. Akcay, and N. Öncan, Appl. Phys. Lett. APPLAB 0003-6951 94, 042108 (2009). 10.1063/1.3076126
- (2009) Appl. Phys. Lett. , vol.94 , pp. 042108
- Nowozin, T.¹ Marent, A.² Geller, M.³ Bimberg, D.⁴ Akcay, N.⁵ Öncan, N.⁶

25
- 18544383769
- ICDMEN 8755-3996,. 10.1109/MCD.2005.1414313
- J. E. Brewer, V. V. Zhirnov, and J. A. Hutchby, IEEE Circuits Devices Mag. ICDMEN 8755-3996 21, 13 (2005). 10.1109/MCD.2005.1414313
- (2005) IEEE Circuits Devices Mag. , vol.21 , pp. 13
- Brewer, J.E.¹ Zhirnov, V.V.² Hutchby, J.A.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.