Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

AIP Advances

Volumn 2, Issue 3, 2012, Pages

  Lai, Yu Ren ^a   Yu, Kai Fu ^a   Lin, Yong Han ^a   Wu, Jong Ching ^b   Lin, Juhn Jong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; GLOW DISCHARGES; MICROMETERS;

CHARGE TRANSPORT PROCESS; DIRECT TUNNELING; EXPERIMENTAL REALIZATIONS; INTERFACIAL ROUGHNESS; JUNCTION BARRIER; TUNNELING CONDUCTION; WIDE TEMPERATURE RANGES; ZERO-BIAS CONDUCTANCE;

TUNNEL JUNCTIONS;

EID: 84874026840     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4749251     Document Type: Article

References (33)

1. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley Interscience, Hoboken, 2007).
2. K. Gloos, R. S. Poikolainen, and J. P. Pekola, Appl. Phys. Lett. 77, 2915 (2000).
3. W. H. Rippard, A. C. Perrella, F. J. Albert, and R. A. Buhrman, Phys. Rev. Lett. 88, 046805 (2002).
4. G. X. Miao, M. Münzenberg, and J. S. Moodera, Rep. Prog. Phys. 74, 036501 (2011).
5. J. G. Simmons, J. Appl. Phys. 35, 2655 (1963).
6. B. J. Jönsson-Åkerman, R. Escudero, C. Leighton, S. Kim, I. K. Schuller, and D. A. Rabson, Appl. Phys. Lett. 77, 1870 (2000).
7. J. B. Barner and S. T. Ruggiero, Phys. Rev. B 39, 2060 (1989).
8. K. Gloos, P. J. Koppinen, and J. P. Pekola, J. Phys.: Condens. Matter 15, 1733 (2003).
9. J. Z. Sun, L. Krusin-Elbaum, P. R. Duncombe, A. Gupta, and R. B. Laibowitz, Appl. Phys. Lett. 70, 1769 (1997).
10. M. Pathak, D. Mazumdar, V. Karthik, X. Zhang, K. B. Chetry, S. Keshavarz, P. LeClair, and A. Gupta, J. Appl. Phys. 110, 053708 (2011).
11. C. W. Miller, Z. P. Li, I. K. Schuller, R. W. Dave, J. M. Slaughter, and J. Åkerman, Phys. Rev. B 74, 212404 (2006).
12. C. W. Miller, Z. P. Li, J. Åkerman, and I. K. Schuller, Appl. Phys. Lett. 90, 043513 (2007).
13. A hot spot was called an intrinsic pinhole effect in J. K. Freericks, B. K. Nikolić, and P. Miller, Int. J. Mod. Phys. B 16, 531 (2002).
14. P. Sheng, E. K. Sichel, and J. I. Gittleman, Phys. Rev. Lett. 40, 1197 (1978).
15. P. Sheng, Phys. Rev. B 21, 2180 (1980).
16. Y. H. Lin, S. P. Chiu, and J. J. Lin, Nanotechnology 19, 365201 (2008).
17. Y. H. Lin and J. J. Lin, J. Appl. Phys. 110, 064318 (2011).
18. H. Xie and P. Sheng, Phys. Rev. B 79, 165419 (2009).
19. Y. C. Sun, S. S. Yeh, and J. J. Lin, Phys. Rev. B 82, 054203 (2010).
20. J. L. Miles and P. H. Smith, J. Electrochem. Soc. 110, 1240 (1963).
21. V. Da Costa, F. Bardou, C. Béal, Y. Henry, J. P. Bucher, and K. Ounadjela, J. Appl. Phys. 83, 6703 (1998).
22. Y. Ando, H. Kameda, H. Kubota, and T. Miyazaki, Jpn. J. Appl. Phys. 38, L737 (1999).
23. Z. H. Wang, M. S. Dresselhaus, G. Dresselhaus, K. A. Wang, and P. C. Eklund, Phys. Rev. B 49, 15890 (1994).
24. G. T. Kim, S. H. Jhang, J. G. Park, Y. W. Park, and S. Roth, Synth. Met. 117, 123 (2001).
25. Y. Z. Long, M. M. Li, C. Gu, M. Wan, J. L. Duvail, Z. Liu, and Z. Fan, Prog. Polym. Sci. 36, 1415 (2011).
26. J. D. R. Buchanan, T. P. A. Hase, B. K. Tanner, N. D. Hughes, and R. J. Hicken, Appl. Phys. Lett. 81, 751 (2002).
27. CRC Handbook of Tables for Applied Engineering Science, 2nd ed., edited by R. E. Bolz and G. L. Tuve (CRC Press, Boca Raton, 1983).
28. H. Im, Yu. A. Pashkin, T. Yamamoto, O. Astafiev, Y. Nakamura, and J. S. Tsai, Appl. Phys. Lett. 88, 112113 (2006).
29. A. C. Perrella, W. H. Rippard, P. G. Mather, M. J. Plisch, and R. A. Buhrman, Phys. Rev. B 65, 201403 (2002);
30. E. Tan, P. G. Mather, A. C. Perrella, J. C. Read, and R. A. Buhrman, Phys. Rev. B 71, 161401 (2005);
31. P. G. Mather, A. C. Perrella, E. Tan, J. C. Read, and R. A. Buhrman, Appl. Phys. Lett. 86, 242504 (2005).
32. J. K. Freericks, Appl. Phys. Lett. 84, 1383 (2004).
33. J. K. Freericks, Phys. Rev. B 70, 195342 (2004).