Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Im, Hyunsik ^a,b   Pashkin, Yu A ^c   Yamamoto, T ^d   Astafiev, O ^d   Nakamura, Y ^d   Tsai, J S ^d  

^a Dongguk University   (South Korea)

^b Japan Science and Technology Agency   (Japan)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; NIOBIUM; OXIDATION; TRANSISTORS;

BARRIER HEIGHT; ELECTRON TRANSISTORS; JUNCTION CAPACITANCE;

TUNNEL JUNCTIONS;

EID: 33645139015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186507     Document Type: Article

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