Spatial separation of recombining carriers within nitride GaN/(AIGa)N quantum wells induced by piezoelectric phenomena

Opto-Electronics Review

Volumn 12, Issue 4, 2004, Pages 369-376

  Galczak, J ^a   Sarzala, R P ^a   Nakwaski, W ^a,b  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Envelope functions; K p method; Nitride quantum well devices; Polarization phenomena

Indexed keywords

ELECTRON TRANSITIONS; GALLIUM NITRIDE; GROUND STATE; HAMILTONIANS; LIGHT POLARIZATION; PIEZOELECTRICITY;

ENVELOPE FUNCTIONS; K.P METHOD; NITRIDE QUANTUM-WELL DEVICES; POLARIZATION PHENOMENA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 11844256359     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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