Metalorganic chemical vapour deposition of GaN layers on ZnO substrates using α-Al2O3 as a transition layer

Journal of Physics D: Applied Physics

Volumn 42, Issue 24, 2009, Pages

  Wang, Shen Jie ^a   Li, Nola ^a   Yu, Hong Bo ^a   Feng, Zhe Chuan ^b   Summers, Christopher ^c   Ferguson, Ian ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH PITS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FILM PEELING; GAN LAYERS; GROWTH OF GAN; HIGH RESOLUTION X RAY DIFFRACTION; METALORGANIC CHEMICAL VAPOUR DEPOSITION; MIRROR-LIKE SURFACE; MOCVD; NEAR BAND EDGE EMISSIONS; NITROGEN SOURCES; OPTIMAL ANNEALING; OXYGEN INCORPORATION; POLYCRYSTALLINE; POST ANNEALING; RED SHIFT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SHALLOW DONORS; SYSTEMATIC STUDY; TRANSITION LAYERS; WURTZITE GAN; ZNO; ZNO SUBSTRATE;

ALUMINUM; AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LEAKAGE (FLUID); OXYGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; ZINC; ZINC OXIDE; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 72449177062     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/24/245302     Document Type: Article

References (16)

1. Kobayashi A, Ohta J and Fujioka H 2006 J. Appl. Phys. 99 123513
2. Namkoong G, Burnham S, Lee K, Trybus E, Doolittle W A, Losurdo M, Capezzuto P, Bruno G, Nemeth B and Nause J 2005 Appl. Phys. Lett. 87 184104-1
3. Hamdani F et al 1998 J. Appl. Phys. 83 2
4. Rogers D J et al 2007 Appl. Phys. Lett. 91 071120
5. Lee R T and Stringfellow G B 1999 J. Electron. Mater. 28 963
6. Park E H, Park J S and Yoo T K 2004 J. Cryst. Growth 272 426
7. Zhang L, Jiang H C, Liu C, Dong J W and Chow P 2007 J. Phys. D: Appl. Phys. 40 3707
8. Fenwick W E, Melton A, Xu T, Li N, Summers C, Jamil M and Ferguson I T 2009 Appl. Phys. Lett. 94 222105
9. Fan H J, Knez M, Scholz R, Nielsch K, Pippel E, Hesse D, Zacharias M and Gosele U 2006 Nautre Mater. 5 627
10. Yang Y, Kim D S, Knez M, Scholz R, Berger A, Pippel E, Hesse D, Gosele U and Zacharias M 2008 J. Phys. Chem. C 112 4068
11. Li N, Park E H, Huang Y, Wang S J, Valencia A, Nemeth B, Nause J and Ferguson I 2006 Proc. SPIE 6337 63370Z
12. Nakamura S 1994 J. Cryst. Growth 145 911
13. Wang S J, Li N, Park E H, Lien S C, Feng Z C, Valencia A, Nause J and Ferguson I 2007 J. Appl. Phys. 102 106105
14. Nepal N, Nakarmi M L, Jang H U, Lin J Y and Jiang H X 2006 Appl. Phys. Lett. 89 192111
15. Neugebauer J and Van de Walle C G 1994 Phys. Rev. B 50 8067
16. Wang L S, Zang K Y, Tripathy S and Chua S J 2004 Appl. Phys. Lett. 85 5881