Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Journal of Physics D: Applied Physics

Volumn 46, Issue 6, 2013, Pages

  Mazur, Yu I ^a   Dorogan, V G ^a   Benamara, M ^a   Ware, M E ^a   Schmidbauer, M ^b   Tarasov, G G ^c   Johnson, S R ^d   Lu, X ^d   Yu, S Q ^e   Tiedje, T ^f   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d Arizona State University   (United States)

^e University of Arkansas   (United States)

^f UNIVERSITY OF VICTORIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONIC GROUND STATE; GAAS; HIGH QUALITY; PHOTOLUMINESCENCE LINES; SPATIAL CONFINEMENT; STRUCTURAL AND OPTICAL PROPERTIES; TEMPERATURE CHANGES;

GALLIUM ARSENIDE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM;

EID: 84873844364     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/6/065306     Document Type: Article

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