Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs/GaAs quantum well

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Mazur, Yu I ^a   Liang, B L ^a   Wang, Zh M ^a   Tarasov, G G ^a,b   Guzun, D ^a   Salamo, G J ^a   Mishima, T D ^c   Johnson, M B ^c  

^a UNIVERSITY OF ARKANSAS   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE RESPONSE; RATE EQUATION;

OPTICAL VARIABLES MEASUREMENT; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748854401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345467     Document Type: Article

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