The effect of Bi composition to the optical quality of GaAs 1-xBix

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Mohmad, A R ^a,b   Bastiman, F ^a   Hunter, C J ^a   Ng, J S ^a   Sweeney, S J ^c   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRYSTAL QUALITIES; GAAS; LOCALIZATION EFFECT; LOW TEMPERATURE GROWTH; MATERIAL QUALITY; OPTICAL QUALITIES; PL INTENSITY; ROOM TEMPERATURE;

ARSENIC; BISMUTH; DEFECTS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 79961039200     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3617461     Document Type: Article

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