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Volumn 83, Issue 20, 2011, Pages

Compositional evolution of Bi-induced acceptor states in GaAs 1-xBix alloy

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EID: 79961119300     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.201201     Document Type: Article
Times cited : (34)

References (38)
  • 1
    • 68249103823 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.3191675
    • X. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3191675 95, 041903 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 041903
    • Lu, X.1
  • 2
    • 0037425189 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.1565499
    • S. Tixier, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1565499 82, 2245 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2245
    • Tixier, S.1
  • 3
    • 71749085843 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.3259434
    • K. M. Yu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3259434 106, 103709 (2009).
    • (2009) J. Appl. Phys. , vol.106 , pp. 103709
    • Yu, K.M.1
  • 4
    • 0035356466 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1368156
    • I. Vurgaftman, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1368156 89, 5815 (2001).
    • (2001) J. Appl. Phys. , vol.89 , pp. 5815
    • Vurgaftman, I.1
  • 5
    • 49449114171 scopus 로고    scopus 로고
    • 1475-7435 10.1504/IJNT.2008.019828
    • T. Tiedje, Int. J. Nanotechnol. 1475-7435 10.1504/IJNT.2008.019828 5, 963 (2006).
    • (2006) Int. J. Nanotechnol. , vol.5 , pp. 963
    • Tiedje, T.1
  • 7
    • 46649113360 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.2953176
    • G. Pettinari, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2953176 92, 262105 (2008).
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 262105
    • Pettinari, G.1
  • 8
    • 77956317550 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.81.235211
    • G. Pettinari, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.81.235211 81, 235211 (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 235211
    • Pettinari, G.1
  • 9
    • 48449101748 scopus 로고    scopus 로고
    • 1098-0121 10.1103/PhysRevB.78.035325
    • G. Ciatto, Phys. Rev. B 1098-0121 10.1103/PhysRevB.78.035325 78, 035325 (2008);
    • (2008) Phys. Rev. B , vol.78 , pp. 035325
    • Ciatto, G.1
  • 10
    • 78649753421 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.82.201304
    • G. Ciatto, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.82.201304 82, 201304 (R) (2010).
    • (2010) Phys. Rev. B , vol.82 , pp. 201304
    • Ciatto, G.1
  • 11
    • 0037087918 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.65.115203
    • A. Janotti, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.65.115203 65, 115203 (2002).
    • (2002) Phys. Rev. B , vol.65 , pp. 115203
    • Janotti, A.1
  • 13
    • 40849116339 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.77.085209
    • S. Francoeur, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.77.085209 77, 085209 (2008).
    • (2008) Phys. Rev. B , vol.77 , pp. 085209
    • Francoeur, S.1
  • 14
    • 58149242336 scopus 로고    scopus 로고
    • JAPIAU 0021-8979 10.1063/1.3041479
    • R. N. Kini, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3041479 104, 113534 (2008).
    • (2008) J. Appl. Phys. , vol.104 , pp. 113534
    • Kini, R.N.1
  • 15
    • 0013419130 scopus 로고
    • APPLAB 0003-6951 10.1063/1.97481
    • J. Wagner, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.97481 49, 1080 (1986).
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 1080
    • Wagner, J.1
  • 16
    • 0000808299 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.53.12829
    • R. A. Lewis, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.53.12829 53, 12829 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 12829
    • Lewis, R.A.1
  • 17
    • 4244134599 scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.2.456
    • P. Fisher and H. Y. Fan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.2.456 2, 456 (1959);
    • (1959) Phys. Rev. Lett. , vol.2 , pp. 456
    • Fisher, P.1    Fan, H.Y.2
  • 18
    • 0001692281 scopus 로고
    • JPSOAW 0022-3719 10.1088/0022-3719/11/2/024
    • R. F. Kirkman, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/11/2/024 11, 419 (1978).
    • (1978) J. Phys. C , vol.11 , pp. 419
    • Kirkman, R.F.1
  • 19
    • 79961102208 scopus 로고    scopus 로고
    • 5/2(1Γ7-), respectively (the atomic notation with the subscript giving the total angular momentum is also indicated).
    • 5 / 2 (1 Γ 7 -), respectively (the atomic notation with the subscript giving the total angular momentum is also indicated).
  • 20
    • 1242287379 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.67.235204
    • R. A. Lewis, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.67.235204 67, 235204 (2003).
    • (2003) Phys. Rev. B , vol.67 , pp. 235204
    • Lewis, R.A.1
  • 21
    • 33750713774 scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.25.1660
    • N. O. Lipari and A. Baldereschi, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.25.1660 25, 1660 (1970).
    • (1970) Phys. Rev. Lett. , vol.25 , pp. 1660
    • Lipari, N.O.1    Baldereschi, A.2
  • 22
    • 0009333222 scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.12.630
    • P. J. Lin-Chung and B. W. Henvis, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.12.630 12, 630 (1975).
    • (1975) Phys. Rev. B , vol.12 , pp. 630
    • Lin-Chung, P.J.1    Henvis, B.W.2
  • 23
    • 33845285351 scopus 로고    scopus 로고
    • x on GaAs, the shallow acceptor binding energy increases with respect to the stress-free case due to the removal of the valence band degeneracy: The valence band edge, indeed, acquires a greater heavy-hole character [see e.g., JAPIAU 0021-8979 10.1063/1.366311
    • x on GaAs, the shallow acceptor binding energy increases with respect to the stress-free case due to the removal of the valence band degeneracy: The valence band edge, indeed, acquires a greater heavy-hole character [see e.g., K. S. Kim, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366311 82, 5103 (1997) and references therein]. The value of acceptor binding energy (∼25 meV) we obtain in our samples is therefore greater than that in a stress-free layer. This increases the true energy difference between the binding energy of the acceptor state we observe and that of the most common substitutional acceptors in GaAs.
    • (1997) J. Appl. Phys. , vol.82 , pp. 5103
    • Kim, K.S.1
  • 24
    • 0000584811 scopus 로고
    • JCOMEL 0953-8984 10.1088/0953-8984/3/35/009
    • R. Atzmüller, J. Phys. Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/3/35/009 3, 6775 (1991).
    • (1991) J. Phys. Condens. Matter , vol.3 , pp. 6775
    • Atzmüller, R.1
  • 25
    • 0000491669 scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.6.3836
    • A. K. Bhattacharjee and S. Rodriguez, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.6.3836 6, 3836 (1972).
    • (1972) Phys. Rev. B , vol.6 , pp. 3836
    • Bhattacharjee, A.K.1    Rodriguez, S.2
  • 27
    • 79961120124 scopus 로고    scopus 로고
    • -1 (at T ∼4 K). However, phonon-phonon interaction makes the region of zero transmittance broader
    • - 1 (at T ∼4 K). However, phonon-phonon interaction makes the region of zero transmittance broader [
  • 28
  • 29
    • 79961113218 scopus 로고    scopus 로고
    • 1 for B> ∼15 T is accounted for by the variation of the Coulomb interaction with field and by nonparabolicity effects in the valence band.
    • 1 for B > ∼15 T is accounted for by the variation of the Coulomb interaction with field and by nonparabolicity effects in the valence band.
  • 31
    • 0000083130 scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.48.7910
    • J.-P. Cheng, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.48.7910 48, 7910 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 7910
    • Cheng, J.-P.1
  • 32
    • 79961104794 scopus 로고    scopus 로고
    • + transition for energies above the GaAs reststrahlen band is due to magnetopolaron effects; see Ref. 28.
    • + transition for energies above the GaAs reststrahlen band is due to magnetopolaron effects; see Ref. 28.
  • 33
    • 0005904038 scopus 로고
    • SSCOA4 0038-1098 10.1016/0038-1098(69)90543-2
    • G. E. Stillman, Solid State Commun. SSCOA4 0038-1098 10.1016/0038- 1098(69)90543-2 7, 921 (1969).
    • (1969) Solid State Commun. , vol.7 , pp. 921
    • Stillman, G.E.1
  • 34
    • 0029251507 scopus 로고
    • SSCOA4 0038-1098 10.1016/0038-1098(94)00799-3
    • H. Kobori, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(94) 00799-3 93, 363 (1995).
    • (1995) Solid State Commun. , vol.93 , pp. 363
    • Kobori, H.1
  • 35
    • 0032631350 scopus 로고    scopus 로고
    • MSBTEK 0921-5107 10.1016/S0921-5107(99)00057-4
    • Y. Iye, Mater. Sci. Eng. B MSBTEK 0921-5107 10.1016/S0921-5107(99)00057-4 63, 88 (1999).
    • (1999) Mater. Sci. Eng. B , vol.63 , pp. 88
    • Iye, Y.1
  • 36
    • 0042244787 scopus 로고
    • 1098-0121 10.1103/PhysRevB.48.4437
    • M. Kunzer, Phys. Rev. B 1098-0121 10.1103/PhysRevB.48.4437 48, 4437 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 4437
    • Kunzer, M.1
  • 37
    • 78649747600 scopus 로고    scopus 로고
    • PLRBAQ 1098-0121 10.1103/PhysRevB.82.193204
    • H.-X. Deng, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.82.193204 82, 193204 (2010).
    • (2010) Phys. Rev. B , vol.82 , pp. 193204
    • Deng, H.-X.1
  • 38
    • 0040449905 scopus 로고
    • Neutral double acceptors [e.g., Be0, Zn0, and Hg0 in Ge] have spectra similar to those of single acceptors [see e.g., PLRBAQ 1098-0121 10.1103/PhysRevB.28.6953
    • Neutral double acceptors [e.g., Be 0, Zn 0, and Hg 0 in Ge] have spectra similar to those of single acceptors [see e.g., J. W. Cross, Phys. Rev. B PLRBAQ 1098-0121 10.1103/PhysRevB.28.6953 28, 6953 (1983) and references therein].
    • (1983) Phys. Rev. B , vol.28 , pp. 6953
    • Cross, J.W.1


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