Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Nanotechnology

Volumn 22, Issue 37, 2011, Pages

  Mazur, Yu I ^a   Dorogan, V G ^a   Schmidbauer, M ^b   Tarasov, G G ^c   Johnson, S R ^d   Lu, X ^d   Yu, S Q ^e   Wang, Zh M ^a   Tiedje, T ^f   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d Arizona State University   (United States)

^e University of Arkansas   (United States)

^f UNIVERSITY OF VICTORIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTRUMS; EXCITATION DENSITY; GAAS; GROWTH REGIME; HIGH RESOLUTION X RAY DIFFRACTION; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; LOW TEMPERATURES; LOW-DISLOCATION DENSITY; QUANTUM WELL; TIME-RESOLVED; WELL WIDTH;

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80051996219     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/37/375703     Document Type: Article

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