Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Fu, Deyi ^a,b   Liu, Kai ^a,c   Tao, Tao ^b   Lo, Kelvin ^a   Cheng, Chun ^a   Liu, Bin ^b   Zhang, Rong ^b   Bechtel, Hans A ^c   Wu, Junqiao ^a,c  

^a Lawrence Berkeley National Laboratory   (United States)

^b NANJING UNIVERSITY   (China)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE STUDIES; CORRELATIVE STUDY; CRYSTALLOGRAPHIC DIRECTIONS; DOMAIN BOUNDARY; ELECTRON EFFECTIVE MASS; HIGH QUALITY; IN-PLANE LATTICES; INFRARED REFLECTION SPECTRA; INSULATING PHASE; INSULATING PHASIS; LINEAR COMBINATIONS; METAL-INSULATOR PHASE TRANSITION; METALLIC DOMAINS; METALLIC PHASE; ORDERS OF MAGNITUDE; PLASMA EDGES; POLYCRYSTALLINE; ROOM TEMPERATURE; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES; TWO-DIMENSIONAL DOMAIN; X-RAY DIFFRACTION STUDIES;

ELECTRON MOBILITY; METAL INSULATOR BOUNDARIES; PLASMA TURBULENCE; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION;

INSULATION;

EID: 84873629993     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4788804     Document Type: Article

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