Effect of the substrate on the insulator-metal transition of vanadium dioxide films

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Kovács, György J ^a   Bürger, Danilo ^a   Skorupa, Ilona ^a   Reuther, Helfried ^a   Heller, René ^a   Schmidt, Heidemarie ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GROWTH; ELECTRONIC TRANSITION; EXCESS OXYGEN; EXPECTED ZONE; GRAIN BOUNDARY STRUCTURE; GROWING FILMS; GROWTH MECHANISMS; INSULATOR METAL TRANSITION; SAPPHIRE SUBSTRATES; SI SUBSTRATES; SILICON SUBSTRATES; VACANCY CONCENTRATION; VANADIUM DIOXIDE FILM;

AMORPHOUS SILICON; FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; METAL INSULATOR TRANSITION; OXYGEN; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM ALLOYS;

SUBSTRATES;

EID: 79953665700     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3563588     Document Type: Article

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