Determination of the effective mass of GaN from infrared reflectivity and Hall effect

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1114-1116

  Perlin, P ^a   Litwin Staszewska, E ^a   Suchanek, B ^b   Knap, W ^c   Camassel, J ^c   Suski, T ^a   Piotrzkowski, R ^a   Grzegory, I ^a   Porowski, S ^a   Kaminska, E ^d   Chervin, J C ^e  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c UNIV MONTPELLIER   (France)

^d Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^e SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001116020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115730     Document Type: Article

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