Epitaxial VO2/Cr2O3/sapphire heterostructure for multifunctional applications

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Yang, Tsung Han ^a   Mal, S ^a   Jin, C ^b   Narayan, R J ^b   Narayan, J ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANTIFERROMAGNETICS; ELECTRICAL RESISTIVITY MEASUREMENTS; HETEROSTRUCTURES; MAGNETIC TUNNEL JUNCTION; RESISTANCE CHANGE; SEMICONDUCTOR-TO-METAL TRANSITIONS; SENSOR APPLICATIONS; SHARP TRANSITION; SPIN MOMENTUM; TEMPLATE LAYERS; TRANSITION PROPERTIES; ULTRA-FAST;

ANTIFERROMAGNETISM; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; MAGNETIC PROPERTIES; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

CHROMIUM;

EID: 78751525931     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3541649     Document Type: Article

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