Grain growth and mechanical properties of CeO2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering

Surface and Coatings Technology

Volumn 217, Issue , 2013, Pages 34-38

  Park, In Wook ^a,e   Lin, Jianliang ^a   Moore, John J ^a   Khafizov, Marat ^b   Hurley, David ^b   Manuel, Michele V ^c   Allen, Todd ^d  

^a Department of Metallurgical and Materials Engineering   (United States)

^b IDAHO NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d UNIVERSITY OF WISCONSIN MADISON   (United States)

^e Korea Institute of Industrial Technology   (South Korea)

Author keywords

CeO2 x films; Mechanical properties; Phase transition; Pulsed dc magnetron sputtering; Rapid thermal annealing (RTA)

Indexed keywords

CERIUM OXIDES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GROWTH CONDITIONS; HARDNESS AND ELASTIC MODULUS; HIGH PURITY; MICROSTRUCTURE AND MECHANICAL PROPERTIES; POST-ANNEALING TEMPERATURE; POST-DEPOSITION; PULSED DC MAGNETRON SPUTTERING; REDUCTION OF OXYGEN; SI (100) SUBSTRATE; SILICON SUBSTRATES; UNBALANCED MAGNETRON SPUTTERING SYSTEMS;

CERIUM; CERIUM COMPOUNDS; DEPOSITS; ELECTRON PROBE MICROANALYSIS; FLOW RATE; GRAIN GROWTH; MECHANICAL PROPERTIES; OXIDE FILMS; OXIDES; PHASE TRANSITIONS; PHOTOELECTRONS; RAPID THERMAL ANNEALING; STOICHIOMETRY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MAGNETRON SPUTTERING;

EID: 84873250399     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2012.11.068     Document Type: Article

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