UV crystallization of poly-si using a CeO2 seed layer on plastic substrate for microelectronics applications

Thin Solid Films

Volumn 453-454, Issue , 2004, Pages 100-105

  Kim, Do Young ^a   Shim, Myung Suk ^a   Kim, Chi Hyung ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

CeO2 layer; Passivation layer; Plastic substrate; Seed layer; UV crystallization; XeCl excimer laser

Indexed keywords

ANNEALING; CERIUM COMPOUNDS; CRACKS; CRYSTALLIZATION; EXCIMER LASERS; INDUCTIVELY COUPLED PLASMA; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; MICROELECTRONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCARBONATES; POLYETHYLENE TEREPHTHALATES; SPUTTERING; ULTRAVIOLET RADIATION; VOLUME FRACTION;

CEO2 LAYERS; PASSIVATION LAYERS; PLASTIC SUBSTRATES; SEED LAYERS; ULTRAVIOLET (UV) CRYSTALLIZATION; XECL EXCIMER LASERS;

POLYSILICON;

EID: 1542741398     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.084     Document Type: Conference Paper

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