Electron cyclotron resonance plasma-assisted atomic layer deposition of amorphous Al2O3 thin films

Plasma Science and Technology

Volumn 15, Issue 1, 2013, Pages 52-55

  Xiong, Yuqing ^a   Sang, Lijun ^b   Chen, Qiang ^b   Yang, Lizhen ^b   Wang, Zhengduo ^b   Liu, Zhongwei ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b BEIJING INSTITUTE OF GRAPHIC COMMUNICATION   (China)

Author keywords

Al2O3 thin film; ALD; ECR; HRTEM; TMA

Indexed keywords

AFM; ALD; AMORPHOUS ALUMINA; ATOMIC FORCE MICROSCOPE (AFM); CHEMICAL COMPOSITIONS; DEPOSITION PROCESS; ECR; HIGH GROWTH RATE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; HRTEM; INTERFACIAL LAYER; SI SUBSTRATES; SMOOTH SURFACE; THERMAL ALD; TMA; TRIMETHYLALUMINUM;

ALUMINA; ALUMINUM; ATOMIC FORCE MICROSCOPY; DEPOSITS; ELECTRON CYCLOTRON RESONANCE; FILM THICKNESS; HYDROFLUORIC ACID; HYDROGEN; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION;

ATOMIC LAYER DEPOSITION;

EID: 84873103252     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/15/1/09     Document Type: Article

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