Complementary resistive switching in niobium oxide-based resistive memory devices

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 235-237

  Liu, Xinjun ^a   Sadaf, Sharif Md ^b   Park, Sangsu ^a   Kim, Seonghyun ^a   Cha, Euijun ^c   Lee, Daeseok ^c   Jung, Gun Young ^a   Hwang, Hyunsang ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b MCGILL UNIVERSITY   (Canada)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM)

Indexed keywords

COMPLEMENTARY RESISTIVE SWITCH (CRS); CROSSBAR ARRAYS; NON-VOLATILE MEMORIES; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY;

NIOBIUM OXIDE; OXIDE FILMS; PLATINUM; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84873055776     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2235816     Document Type: Article

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