Operation voltage control in complementary resistive switches using heterodevice

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 600-602

  Lee, Daeseok ^a   Park, Jubong ^a   Jung, Seungjae ^a   Choi, Godeuni ^a   Lee, Joonmyoung ^a   Kim, Seonghyun ^a   Woo, Jiyong ^a   Siddik, Manzar ^a   Cha, Eujun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Complementary resistive switches (CRSs); cross point array; nonvolatile memory; resistive memory; RRAM

Indexed keywords

COMPLEMENTARY RESISTIVE SWITCHES (CRSS); CROSS-POINT ARRAY; NON-VOLATILE MEMORIES; RESISTIVE MEMORY; RRAM;

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

RANDOM ACCESS STORAGE;

EID: 84862828865     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186113     Document Type: Article

References (12)

1. R. Waser and M. Aono, " Nanoionics-based resistive switching memories, " Nature Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
2. C. Cen, S. Thiel, J. Mannhart, and J. Levy, " Oxide nanoelectronics on demand, " Science, vol. 323, no. 5917, pp. 1026-1030, Feb. 2009.
3. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, " Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses, " in IEDM Tech. Dig., 2004, pp. 587-590.
4. Y. Sasago, M. Kinoshita, T. Morikawa, K. Kurotsuchi, S. Hanzawa, T. Mine, A. Shima, Y. Fujisaki, H. Kume, H. Moriya, N. Takaura, and K. Torii, " Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode, " in Proc. VLSI Tech. Symp., 2009, vol. 2B-1, pp. 24-25.
5. 2?x/Pt Schottky diodes, " Jpn. J. Appl. Phys., vol. 48, pt. 2, no. 5, pp. 05DF03-1-05DF03-4, May 2009.
6. E. Linn, R. Rosezin, C. Kugeler, and R. Waser, " Complementary resistive switches for passive nanocrossbar memories, " Nature Mater., vol. 9, no. 5, pp. 403-406, May 2010.
7. 2?x bilayer structures, " Nature Mater., vol. 10, no. 8, pp. 625-630, Aug. 2011.
8. R. Rosezin, E. Linn, L. Nielen, C. Kugeler, R. Bruchhaus, and R. Waser, " Integrated complementary resistive switches for passive high-density nanocrossbar arrays, " IEEE Electron Device Lett., vol. 32, no. 2, pp. 191-193, Feb. 2011.
9. S. Yu, J. Liang, Y. Wu, and H.-S. P. Wong, " Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays, " Nanotechnology, vol. 21, no. 46, p. 465 202, Nov. 2010.
10. J. M. Lee, E. M. Bourim, W. T. Lee, J. B. Park, M. S. Jo, S. J. Jung, J. H. Shin, and H. S. Hwang, " Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications, " Appl. Phys. Lett., vol. 97, p. 172 105, Oct. 2010.
11. J. B. Park, K. P. Biju, S. Jung, W. Lee, J. Lee, S. Kim, S. Park, J. Shin, and H. Hwang, " Multibit operation of TiOx-based ReRAM by Schottky barrier height engineering, " IEEE Electron Device Lett., vol. 32, no. 4, pp. 476-478, Apr. 2011.
12. C. J. Amsinck, N. H. D. Spigna, D. P. Nackashi, and P. D. Franzon, " Scaling constraints in nanoelectronic random-access memories, " Nanotechnology, vol. 16, no. 10, pp. 2251-2260, Oct. 2005.