Investigating the degradation behavior under hot carrier stress for InGaZnO TFTs with symmetric and asymmetric structures

Thin Solid Films

Volumn 528, Issue , 2013, Pages 57-60

  Tsai, Ming Yen ^a   Chang, Ting Chang ^a,b   Chu, Ann Kuo ^a   Chen, Te Chih ^a   Hsieh, Tien Yu ^a   Chen, Yu Te ^a   Tsai, Wu Wei ^c   Chiang, Wen Jen ^c   Yan, Jing Yi ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Hot carrier; Indium gallium zinc oxide (IGZO); Kick back effect; Thin film transistors (TFTs)

Indexed keywords

ASYMMETRIC STRUCTURES; C-V CURVE; C-V MEASUREMENT; DEGRADATION BEHAVIOR; DIFFERENT MECHANISMS; ELECTRICAL FIELD; GATE-TO-DRAIN CAPACITANCE; HOT CARRIER EFFECT; HOT-CARRIER STRESS; IN-CHANNELS; INDIUM GALLIUM ZINC OXIDES; IV CHARACTERIZATION; KICK-BACK; LOW ELECTRICAL FIELD; ON-CURRENTS; SOURCE/DRAIN STRUCTURES; STRESS-INDUCED; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); TRAP STATE;

ELECTRIC BREAKDOWN; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84872935140     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.095     Document Type: Conference Paper

References (17)

1. Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Nature 432 2004 488
2. W.F. Chung, T.C. Chang, H.W. Li, C.W. Chen, Y.C. Chen, S.C. Chen, T.Y. Tseng, and Y.H. Tai Electrochem. Solid State Lett. 14 3 2011 H114
3. Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, and Hideya Kumomi Appl. Phys. Lett. 89 2006 112123
4. Sunho Jeong, Young-Geun Ha, Jooho Moon, Antonio Facchetti, and Tobin J. Marks Adv. Mater. 22 2010 1346
5. M.C. Chen, T.C. Chang, S.Y. Huang, K.C. Chang, H.W. Li, S.C. Chen, J. Lu, and Y. Shi Appl. Phys. Lett. 94 2009 162111
6. M.C. Chen, T.C. Chang, S.Y. Huang, S.C. Chen, C.W. Hu, C.T. Tsai, and Simon M. Sze Electrochem. Solid State Lett. 13 6 2010 H191
7. M.C. Chen, T.C. Chang, C.T. Tsai, S.Y. Huang, S.C. Chen, C.W. Hu, S.M. Sze, and M.J. Tsai Appl. Phys. Lett. 96 2010 262110
8. T.C. Chang, F.Y. Jian, S.C. Chen, and Y.T. Tsai Mater. Today 14 12 2011 608
9. C.T. Tsai, T.C. Chang, S.C. Chen, I. Lo, S.W. Tsao, M.C. Hung, J.J. Chang, C.Y. Wu, and C.Y. Huang Appl. Phys. Lett. 96 2010 242105
10. T.C. Chen, T.C. Chang, T.Y. Hsieh, C.T. Tsai, S.C. Chen, C.S. Lin, M.C. Hung, C.H. Tu, J.J. Chang, and P.L. Chen Appl. Phys. Lett. 97 2010 192103
11. T.C. Chen, T.C. Chang, C.T. Tsai, T.Y. Hsieh, S.C. Chen, C.S. Lin, M.C. Hung, C.H. Tu, J.J. Chang, and P.L. Chen Appl. Phys. Lett. 97 2010 112104
12. Y.C. Chen, T.C. Chang, H.W. Li, S.C. Chen, J. Lu, W.F. Chung, Y.H. Tai, and T.Y. Tseng Appl. Phys. Lett. 96 2010 262104
13. W.F. Chung, T.C. Chang, H.W. Li, S.C. Chen, Y.C. Chen, T.Y. Tseng, and Y.H. Tai Appl. Phys. Lett. 98 2011 152109
14. Bing J. Sheu, and Chenming Hu IEEE J. Solid State Circuits SC-19 4 1984 519
15. Yue Kuo J. Electrochem. Soc. 143 8 1996 2680
16. Yue Kuo, Thin Film Transistors: Amorphous silicon thin film transistors (Kluwer Academic Publishers), pp 183-201.
17. Kook Chul Moon, Jae-Hoon Lee, and Min-Koo Han IEEE Trans. Electron Dev. 52 4 2005 512