Horizontally redundant, split-gate a-Si:H thin film transistors

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2680-2682

  Kuo, Yue ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIELECTRIC PROPERTIES; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; GATES (TRANSISTOR); LITHOGRAPHY;

AMORPHOUS SILICON THIN FILM TRANSISTOR; CHANNEL WIDTH TO LENGTH RATIO; SELF ALIGNED SOURCE DRAIN TO GATE CONFIGURATION; SOURCE DRAIN VIAS;

THIN FILM TRANSISTORS;

EID: 0030212320     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837070     Document Type: Article

References (7)

1. See, for example, references to TFTs in conference records and proceedings of the Society for Information Display (SID), Santa Anna, CA; Thin Film Transistor Technologies, Y. Kuo, Editor, PV 92-24, and Thin Film Transistor Technologies II, Y. Kuo, Editor, PV 94-35, The Electrochemical Society Proceedings Series, Pennington, NJ (1992, 1994).
2. See, for example, references to TFTs in conference records and proceedings of the Society for Information Display (SID), Santa Anna, CA; Thin Film Transistor Technologies, Y. Kuo, Editor, PV 92-24, and Thin Film Transistor Technologies II, Y. Kuo, Editor, PV 94-35, The Electrochemical Society Proceedings Series, Pennington, NJ (1992, 1994).
3. M. J. Powell, J. A. Chapman, A. G. Knapp, I. D. French, J. R. Hughes, A. D. Pearson, M. J. Edwards, R. A. Ford, M. C. Hemings, O. F. Hill, D. H. Nicholls, and N. K. Wright, Proc. SID, 29, 227 (1988).
4. Y. Kuo, This Journal, 139, 548 (1992).
5. H. Ogura, M. Kunigita, M. Suekane, N. Imajo, S. Enoki, M. Yuki, and R. Muto, Japan Display '86, 208 (1986).
6. Y. Kuo, This Journal, 139, 1199 (1992).
7. Y. Kuo, Appl. Phys. Lett., 67, 2173 (1995).