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Volumn 34, Issue 11, 2012, Pages 1917-1920

Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods

(11) Lv, Jianguo a,b,c Liu, Changlong b Gong, Wanbing b Zi, Zhenfa b Chen, Xiaoshuang c Huang, Kai d Wang, Tao a He, Gang a Shi, Shiwei a Song, Xueping a Sun, Zhaoqi a

a ANHUI UNIVERSITY (China)

b HEFEI NORMAL UNIVERSITY (China)

c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

d ANHUI JIANZHU UNIVERSITY (China)

Author keywords

Near infrared; Photoluminescence; Second order diffraction; Temperature dependent; ZnO

Indexed keywords

CRYSTAL STRUCTURE; DISSOCIATION; EXCITONS; FIELD EMISSION MICROSCOPES; FILM GROWTH; INFRARED DEVICES; NANORODS; PHONONS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTAL STRUCTURE AND MORPHOLOGY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; LOW TEMPERATURE PHOTOLUMINESCENCE; NEAR BAND EDGE EMISSIONS; NEAR INFRARED; PHOTOLUMINESCENCE PROPERTIES; SECOND ORDER DIFFRACTION; TEMPERATURE DEPENDENT;

II-VI SEMICONDUCTORS;

EID: 84872815309 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2012.05.030 Document Type: Article

Times cited : (24)

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