A low temperature combination method for the production of ZnO nanowires

Nanotechnology

Volumn 16, Issue 10, 2005, Pages 2188-2192

  Cross, R B M ^a   De Souza, M M ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATALYST ACTIVITY; CMOS INTEGRATED CIRCUITS; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; NUCLEATION; SILICON WAFERS; SYNTHESIS (CHEMICAL);

NANOWIRE SYNTHESIS; ULTRAVIOLET EMISSION; ZNO NANOWIRES;

ZINC OXIDE;

EID: 25444512121     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/10/035     Document Type: Article

References (27)

1. Iijima S 1991 Nature 254 56
2. Hu J, Odom T W and Lieber C M 1999 Acc. Chem. Res. 32 435
3. Cui Y and Lieber C M 2001 Science 291 851
4. Yang P, Yan H, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R and Choi H-J 2002 Adv. Funct. Mater. 12 323
5. Appel D 2002 Nature 419 553
6. Kong X Y and Wang Z L 2003 Nano Lett. 3 1625
7. Service R F 1997 Science 276 895
8. Minami T 2000 Mater. Res. Bull. 25 38
9. Joseph M, Tabata H, Saeki H, Ueda K and Kawai T 2001 Physica B 302/303 140
10. Huang M H, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R and Yang P 2001 Science 292 1897
11. Heo Y W, Norton D P, Tien L C, Kwon Y, Kang B S, Ren F, Pearton S J and LaRoche J R 2004 Mater. Sci. Eng. R 47 1
12. Zhu Y W, Zhang Z, Sun X C, Feng S Q, Xu J, Zhao Q, Xiang B, Wang R M and Yu D P 2003 Appl. Phys. Lett. 83 144
13. Park W I, Kim D H, Jung S W and Yi G C 2002 Appl. Phys. Lett. 80 4232
14. Xu C K, Xu G D, Liu Y K and Wang G H 2002 Solid State Commun. 122 175
15. Yao B D, Chan Y F and Wang N 2002 Appl. Phys. Lett. 81 1287
16. Greene L E, Law M, Goldberger J, Kim F, Johnson J C, Zhang Y, Saykally R J and Yang P 2003 Angew. Chem. Int. Edn Engl. 42 3031
17. Vayssieres L 2003 Adv. Mater. 15 464
18. Hung C-H and Whang W-T 2003 Mater. Chem. Phys. 82 705
19. Lyu S C, Zhang Y, Ruh H, Lee H-J, Shim H-W, Suh E-K and Lee C J 2002 Chem. Phys. Lett. 363 134
20. Studenikin S A, Golego N and Cocivera M 1998 J. Appl. Phys. 84 2287
21. Leiter F H, Alves H R, Hofstaetter A, Hoffman D M and Meyer B K 2001 Phys. Status Solidi b 226 R4
22. Egelhaaf H-J and Oelkrug D 1996 J. Cryst. Growth 161 190
23. Zhang S B, Wei S-H and Zunger A N 2001 Phys. Rev. B 63 075205
24. Pierce B J and Hengehold R L 1976 J. Appl. Phys. 47 644
25. Koyano M, Quocbao P, Thanhbinh L T, Hongha L, Ngoclong N and Katayama S 2002 Phys. Status Solidi a 193 125
26. Wang Y G, Lau S P, Zhang X H, Lee H W, Yu S F, Tay B K and Hng H H 2003 Chem. Phys. Lett. 375 113
27. Gomi M, Oohira N, Ozaki K and Koyano M 2003 Japan. J. Appl. Phys. 42 481