Band-edge emission of undoped and doped ZnO single crystals at room temperature

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3658-3663

  Ohashi, Naoki ^a   Sekiguchi, Takashi ^a   Aoyama, Kouichiroh ^b   Ohgaki, Takeshi ^b   Terada, Yoshihiro ^b   Sakaguchi, Isao ^a   Tsurumi, Takaaki ^b   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; BOUND EXCITON; CATHODOLUMINESCENCE SPECTRA; DOPED ZNO; EFFECT OF DOPING; EMISSION EFFICIENCIES; FLUX METHODS; FREE-EXCITON EMISSIONS; INTENSE EMISSION; LUMINESCENCE PROPERTIES; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; UNDOPED CRYSTALS; VAPOR TRANSPORT METHODS; ZNO;

EXCITONS; LASER RADIATION; VAPORS; ZINC OXIDE;

ALUMINUM;

EID: 0037087428     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1450260     Document Type: Article

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