SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 519, Issue 17, 2011, Pages 5826-5830

Anomalous behavior in ZnMgO thin films deposited by sol-gel method

(6) Singh, Amanpal a,b Kumar, Dinesh a Khanna, P K b Kumar, Anuj a Kumar, Mukesh a Kumar, Mohit c

a KURUKSHETRA UNIVERSITY (India)

b CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE (India)

c Center for Life Science Automation (Germany)

Author keywords

Hall effect; Photoluminescence; UV VIS spectroscopy; Zinc oxide

Indexed keywords

ANNEALING TEMPERATURES; ANOMALOUS BEHAVIOR; DOPED ZINC OXIDE THIN FILMS; P-TYPE SILICON; PL MEASUREMENTS; PREFERRED ORIENTATIONS; SOL-GEL METHODS; SOL-GEL ROUTES; SOLID STATE LIGHTING; UV-VIS SPECTROSCOPY; WORK FUNCTION MEASUREMENTS; WURTZITE CRYSTAL STRUCTURE; ZNMGO;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTAL ORIENTATION; GELS; HALL EFFECT; MAGNESIUM; OXYGEN; OXYGEN VACANCIES; PARTICLE SIZE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; WORK FUNCTION; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

OXIDE FILMS;

EID: 79957992471 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.188 Document Type: Conference Paper

Times cited : (34)

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