The effects of thermal annealing on properties of MgxZn1-xO films by sputtering

Journal of Alloys and Compounds

Volumn 472, Issue 1-2, 2009, Pages 208-210

  Li, Hui ^a   Zhang, Yongzhe ^a   Pan, Xiaojun ^a   Wang, Tao ^a   Xie, Erqing ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Band gap; Doping; Photoluminescence; Thermal annealing

Indexed keywords

ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); EMISSION SPECTROSCOPY; ENERGY GAP; LATTICE CONSTANTS; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; ULTRAVIOLET SPECTROSCOPY; ZINC; ZINC OXIDE;

ANNEALING TEMPERATURES; AS-GROWN; BAND GAP; CRYSTAL QUALITIES; DOPING; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; MG CONTENTS; MG-DOPED; PHOTOLUMINESCENCE SPECTRUM; POST-ANNEALING; THERMAL ANNEALING; UV EMISSIONS; UV-VIS ABSORPTION SPECTRUMS; X-RAY DIFFRACTION PATTERNS;

ANNEALING;

EID: 61349188385     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.04.018     Document Type: Article

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