(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 512-516

  Chauveau, J M ^a,b   Morhain, C ^a   Teisseire, M ^a   Laugt M ^a   Deparis, C ^a   Zuniga Perez, J ^a,b   Vinter, B ^a,b  

^a CRHEA CNRS   (France)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

Non polar; Quantum wells; ZnO

Indexed keywords

ACTIVATION ENERGY; CORUNDUM; CRYSTAL GROWTH; CRYSTALS; ELECTRIC FIELDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUENCHING; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; WELLS; ZINC; ZINC OXIDE;

HETEROSTRUCTURES; NON-POLAR; ORIENTED STRUCTURES; PHOTOLUMINESCENCE EMISSIONS; POTENTIAL APPLICATIONS; QUANTUM WELLS; QUANTUM-CONFINED STARK EFFECTS; THERMAL ESCAPES; THERMAL QUENCHING; UV SPECTRAL RANGES; ZNO;

SEMICONDUCTOR QUANTUM WELLS;

EID: 61349139965     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.067     Document Type: Article

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