Dielectric and ferroelectric properties of BaTi2O5 thin films prepared by sol-gel method

Materials Letters

Volumn 95, Issue , 2013, Pages 55-58

  Guo, Dongyun ^a   Gong, Yiping ^a   Wang, Chuanbin ^a   Shen, Qiang ^a   Zhang, Lianmeng ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

BaTi2O5 thin film; Dielectric property; Ferroelectric property; Sol gel method

Indexed keywords

ANNEALING TEMPERATURES; COERCIVE FIELD; DIELECTRIC AND FERROELECTRIC PROPERTIES; FERROELECTRIC PROPERTY; REMNANT POLARIZATIONS;

ANNEALING; BARIUM COMPOUNDS; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; FERROELECTRICITY; SOL-GEL PROCESS; THIN FILMS;

FILM PREPARATION;

EID: 84872802236     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.12.070     Document Type: Article

References (20)

1. 3 films Phys. Rev. B: Condens. Matter 75 2007 104103
2. Y Saito, H Takao, T Tani, T Nonoyama, K Takatori, and T Homma Lead-free piezoceramics Nature 432 2004 84 87 (Pubitemid 39496798)
3. M Alexe, A Gruverman, C Harnagea, N D Zakharov, A Pignolet, and D. Hesse Switching properties of self-assembled ferroelectric memory cells Appl. Phys. Lett. 75 1999 1158 1160 (Pubitemid 129307257)
4. JF Scott, and C.A. Paz de Araujo Ferroelectric memories Science 246 1989 1400 1405
5. B H Park, B S Kang, S D Bu, T W Noh, J Lee, and W. Jo Lanthanum-substituted bismuth titanate for use in non-volatile memories Nature 401 1999 682 684
6. 5 prepared by a floating zone method Mater. Trans. 44 2002 1644 1646
7. 5 thin films prepared by pulsed laser deposition at different substrate temperatures Mater. Chem. Phys. 113 2009 130 134
8. 5 thin films on Pt(1 1 1)/Ti/SiO2/Si substrates by pulsed laser deposition J. Alloys Compd. 512 2012 140 143
9. 5 films and their in-plane orientations Appl. Surf. Sci. 259 2012 178 185
10. 5 thick films and their dielectric responses J. Eur. Ceram. Soc. 32 2012 2459 2467
11. 12 thin films by sol-gel method J. Electron. Mater. 30 2010 258 261
12. 3 ceramics Mater. Lett. 62 2008 1159 1161
13. 3 thin films prepared through a sol-gel process Appl. Phys. Lett. 90 2007 022901
14. 12 films prepared by sol-gel process Appl. Phys. Lett. 81 2002 2611 2613
15. FF. Lange Chemical solution routes to single-crystal thin films Science 273 1996 903 909 (Pubitemid 26275155)
16. 5 powders prepared by sol-gel method Mater. Lett. 73 2012 72 74
17. 12 thin films prepared by sol-gel method for non-volatile memory Appl. Phys. A 97 2009 877 881
18. 12 thin films prepared by sol-gel method J. Am. Ceram. Soc. 91 2008 3280 3284
19. 5 single crystal by a floating zone method Mater. Trans. 44 2003 802 804
20. 5 Jpn. J. Appl. Phys. 42 2002 L946 948