Preparation of (020)-oriented BaTi 2O 5 thick films and their dielectric responses

Journal of the European Ceramic Society

Volumn 32, Issue 10, 2012, Pages 2459-2467

  Ito, Akihiko ^a   Guo, Dongyun ^a   Tu, Rong ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

BaTi 2O 5; BaTiO 3 and titanates; Dielectric properties; Films; Impedance

Indexed keywords

BATI 2O 5; BATIO; COLUMNAR GRAIN; CONSTANT PHASE ELEMENT; DEPOSITION TEMPERATURES; DIELECTRIC RESPONSE; ELECTRIC MODULUS; ELECTRIC RESPONSE; ELECTRICAL RESPONSE; EQUIVALENT ELECTRIC CIRCUITS; FREQUENCY DEPENDENCE; LASER CHEMICAL VAPOR DEPOSITION; MOLAR RATIO; PARALLEL COMBINATION; RELATIVE PERMITTIVITY; SI SUBSTRATES; SINGLE PHASE;

BARIUM; BARIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC IMPEDANCE; ELECTRIC NETWORK ANALYSIS; FILMS; PLATINUM; THICK FILMS;

FILM PREPARATION;

EID: 84860573075     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.02.022     Document Type: Article

References (33)

1. Akashi T., Iwata H., Goto T. Mater Trans 2003, 44:802-804.
2. Tu R., Goto T. Mater Trans 2006, 47:2898-2903.
3. Waghmare U., Sluiter M.H.F., Kimura T., Goto T., Kawazoe Y. Appl Phys Lett 2004, 84:4917-4919.
4. Scott J.F., Paz de Araujo C.A. Science 1989, 246:1400-1405.
5. Ngo E., Joshi P.C., Cole M.W., Hubbard C.W. Appl Phys Lett 2001, 79:248-250.
6. Wang Z., Miao J., Zhu W. J Eur Ceram Soc 2007, 27:3759-3764.
7. Liao M., Imura M., Fang X., Nakajima K., Chen G., Koide Y. Appl Phys Lett 2009, 94:242901.
8. Krieger J.H. J Appl Phys 2009, 105:061629.
9. Yu O., Andrey G., Kaul R., Wahl G. Chem Vapor Depos 2004, 3:193-196.
10. Wang C.B., Tu R., Goto T. J Vac Sci Technol 2007, 25:304-307.
11. Banal R., Kimura T., Goto T. Mater Trans 2005, 46:2114-2116.
12. Ito A., Kadokura H., Kimura T., Goto T. J Alloy Compd 2010, 489:469-474.
13. Ito A., Endo J., Kimura T., Goto T. Surf Coat Technol 2010, 204:3846-3850.
14. Jonscher A.K. J Mater Sci 1978, 13:553-562.
15. Masó N., Yue X.Y., Goto T., West A.R. J Appl Phys 2011, 109:024107.
16. Statton W.O. J Chem Phys 1951, 19:33-40.
17. Rase D.E., Roy R. J Am Ceram Soc 1955, 38:102-113.
18. Negas T., Roth R.S., Parker H.S., Minor D. J Solid State Chem 1974, 9:297-307.
19. O'Bryan H.M., Thomson J. J Am Ceram Soc 1974, 57:522-526.
20. Jonker G.H., Kwestroo W. J Am Ceram Soc 1958, 41:390-394.
21. Guha J.P. J Am Ceram Soc 1977, 60:246-249.
22. Ritter J.J, Roth R.S., Blendell J.E. J Am Ceram Soc 1986, 69:155-162.
23. Kirby K.W., Wechsler A. J Am Ceram Soc 1991, 74:1841-1847.
24. Akishige Y. Jpn J Appl Phys 2005, 44:7144-7147.
25. Kimura T., Goto T., Yamane H., Iwata H., Kajiwara T., Akashi T. Acta Crystallogr C 2003, 59:128-130.
26. Zhu N., West A.R. J Am Ceram Soc 2009, 93:295-300.
27. Javadpour J., Eror N.G. J Am Ceram Soc 1988, 71:206-213.
28. Tohma T., Masumoto H., Goto T. Mater Trans 2002, 43:2880-2884.
29. Kwak B.S., Zhang K., Boyd E.P., Erbil A., Wilkens B.J. J Appl Phys 1991, 69:767-772.
30. Beltrán H., Gómez B., Masó N., Cordoncillo E., Escribano P., West A.R. J Appl Phys 2005, 97:084104.
31. Akishige Y., Xu J., Shigematsu H., Morito S., Ohba T. Jpn J Appl Phys 2009, 48:051402.
32. Hushur A., Shigematsu H., Akishige Y., Kojima S. Appl Phys Lett 2005, 86:112903.
33. Yashima M., Tu R., Goto T., Yamane H. Appl Phys Lett 2005, 87:101909.