Blocking growth by an electrically active subsurface layer: The effect of si as an antisurfactant in the growth of GaN

Physical Review Letters

Volumn 110, Issue 3, 2013, Pages

  Markurt, T ^a   Lymperakis, L ^b   Neugebauer, J ^b   Drechsel, P ^c   Stauss, P ^c   Schulz, T ^a   Remmele, T ^a   Grillo, V ^d,e   Rotunno, E ^e   Albrecht, M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^d CNR   (Italy)

^e IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED; DELTA-DOPED LAYERS; DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTRICAL DIPOLES; GAN GROWTH; GROWTH OF GAN; LAYER THICKNESS; SI ATOMS; SUBSURFACE LAYER; SUBSURFACE SITES; UNIT CELLS;

CHARGE TRANSFER; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MONOLAYERS; SILICON; SILICON NITRIDE;

DENSITY FUNCTIONAL THEORY;

EID: 84872744148     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.036103     Document Type: Article

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