TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1832-1835

  Hijikuro, M ^a   Kuwano, N ^a   Takeuchi, M ^b,c   Aoyagi, Y ^b,c  

^a KYUSHU UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION PROCESS; ANTI-SURFACTANT TREATMENT; BURGERS VECTORS; THREADING DISLOCATIONS; 61.72.LK; 68.37.LP; 68.55.JK; 81.05.EA; 81.15.KK;

DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS; SURFACE ACTIVE AGENTS;

EID: 33746342460     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565157     Document Type: Conference Paper

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