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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 890-893

Phonon-assisted auger recombination processes in InGaAs/GaAs single-quantum-well lasers

(3) Nee, Tzer En a Cheng, Chao Ching a Lin, Ray Ming a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

Auger recombination; InGaAs GaAs lasers; Quantum well

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTROLUMINESCENCE; ELECTRON GUNS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; PHONONS; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

AMPLIFIED SPONTANEOUS EMISSION (ASE); AUGER RECOMBINATION; INGAAS/GAAS LASERS; NONRADIATIVE COMPONENTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 2442533178 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.890 Document Type: Article

Times cited : (3)

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