Dry etching properties of TiO2 thin films in O 2/CF4/Ar plasma

Vacuum

Volumn 92, Issue , 2013, Pages 85-89

  Choi, Kyung Rok ^a   Woo, Jong Chang ^a   Joo, Young Hee ^a   Chun, Yoon Soo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

AFM; CF4 Ar; Etching; TiO2; XPS

Indexed keywords

AFM; DC BIAS VOLTAGE; ETCH RATES; ETCHING PARAMETERS; ETCHING PROPERTIES; GAS MIXING RATIO; OXIDE BONDS; PROCESS PRESSURE; REDEPOSITION; RF-POWER; TIO;

ARGON; ATOMIC FORCE MICROSCOPY; DEPOSITION; ETCHING; ION BOMBARDMENT; PHOTOELECTRONS; SURFACE ROUGHNESS; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 84872356769     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.11.009     Document Type: Article

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