-
2
-
-
80052777077
-
Processor caches built using multi-level spin-transfer torque RAM cells
-
Y. Chen et al., "Processor caches built using multi-level spin-transfer torque RAM cells," in Int'l Symposium on Low Power Electronics and Design (ISLPED), 2011, pp. 73-78.
-
(2011)
Int'l Symposium on Low Power Electronics and Design (ISLPED)
, pp. 73-78
-
-
Chen, Y.1
-
3
-
-
79952037020
-
Design of last-level on-chip cache using spin-torque transfer RAM (STT-RAM)
-
W. Xu et al., "Design of Last-Level On-Chip Cache Using Spin-Torque Transfer RAM (STT-RAM)," IEEE Transactions on Very Large Scale Integration Systems (TVLSI), vol. 19, no. 3, pp. 483-493, 2011.
-
(2011)
IEEE Transactions on Very Large Scale Integration Systems (TVLSI)
, vol.19
, Issue.3
, pp. 483-493
-
-
Xu, W.1
-
5
-
-
77954982649
-
Use ecp, not ecc, for hard failures in resistive memories
-
S. Schechter et al., "Use ecp, not ecc, for hard failures in resistive memories," in Proceedings of the 37th Annual International Symposium on Computer Architecture(ISCA), 2010, pp. 141-152.
-
(2010)
Proceedings of the 37th Annual International Symposium on Computer Architecture(ISCA)
, pp. 141-152
-
-
Schechter, S.1
-
6
-
-
79957751556
-
Design techniques to improve the device write margin for mram-based cache memory
-
H. Sun et al., "Design techniques to improve the device write margin for mram-based cache memory," in GLSVLSI, 2011, pp. 97-102.
-
(2011)
GLSVLSI
, pp. 97-102
-
-
Sun, H.1
-
7
-
-
33847743417
-
A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-ram
-
M. Hosomi et al., "A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram," in IEDM, 2005, pp. 459-462.
-
(2005)
IEDM
, pp. 459-462
-
-
Hosomi, M.1
-
8
-
-
85008008190
-
2 Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
-
T. Kawahara et al., "2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read," IEEE Journal of Solid-State Circuits, vol. 43, no. 1, pp. 109-120, 2008.
-
(2008)
IEEE Journal of Solid-State Circuits
, vol.43
, Issue.1
, pp. 109-120
-
-
Kawahara, T.1
-
9
-
-
33750600861
-
New generation of predictive technology model for sub-45 nm early design exploration
-
W. Zhao and Y. Cao, "New generation of predictive technology model for sub-45 nm early design exploration," IEEE Transactions on Electron Devices, vol. 53, no. 11, pp. 2816-2823, 2006.
-
(2006)
IEEE Transactions on Electron Devices
, vol.53
, Issue.11
, pp. 2816-2823
-
-
Zhao, W.1
Cao, Y.2
-
10
-
-
84862953711
-
Stt-ram cell design optimization for persistent and non-persistent error rate reduction: A statistical design view
-
Y. Zhang et al., "Stt-ram cell design optimization for persistent and non-persistent error rate reduction: A statistical design view," in International Conference on Computer Aided Design (ICCAD), 2011, pp. 471-477.
-
(2011)
International Conference on Computer Aided Design (ICCAD)
, pp. 471-477
-
-
Zhang, Y.1
-
11
-
-
39349114172
-
Thermal fluctuation effects on spin torque induced switching: Mean and variations
-
X. Wang et al., "Thermal fluctuation effects on spin torque induced switching: Mean and variations," Journal of Applied Physics, vol. 103, no. 3, p. 034507, 2008.
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.3
, pp. 034507
-
-
Wang, X.1
-
12
-
-
17044416758
-
Currents, torques, and polarization factors in magnetic tunnel junctions
-
J. C. Slonczewski, "Currents, torques, and polarization factors in magnetic tunnel junctions," Phys. Rev. B, vol. 71, no. 2, p. 024411, 2005.
-
(2005)
Phys. Rev. B
, vol.71
, Issue.2
, pp. 024411
-
-
Slonczewski, J.C.1
-
13
-
-
84862074493
-
Spintronic memristor based temperature sensor design with cmos current reference
-
X. Bi et al., "Spintronic memristor based temperature sensor design with cmos current reference," in Design, Automation Test in Europe Conference Exhibition (DATE), 2012, pp. 1301-1306.
-
(2012)
Design, Automation Test in Europe Conference Exhibition (DATE)
, pp. 1301-1306
-
-
Bi, X.1
-
16
-
-
84872075967
-
-
"Wind River Simics," http://www.windriver.com/products/simics/.
-
Wind River Simics
-
-
-
17
-
-
51549109199
-
Circuit and Microarchitecture Evaluation of 3D Stacking Magnetic RAM (MRAM) as a Universal Memory Replacement
-
X. Dong et al., "Circuit and Microarchitecture Evaluation of 3D Stacking Magnetic RAM (MRAM) as a Universal Memory Replacement," in Design Automation Conference (DAC), 2008, pp. 554-559.
-
(2008)
Design Automation Conference (DAC)
, pp. 554-559
-
-
Dong, X.1
|