Electric-field effect on coercivity distributions in FePt magneto-electric devices

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Herrera Diez, L ^a   Bernand Mantel, A ^a   Michele, O ^a   Vila, L ^b   Warin, P ^b   Marty, A ^b   Ranno, L ^a   Givord, D ^a  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; COERCIVITY DISTRIBUTIONS; DIELECTRIC LAYER; FIELD-EFFECT STRUCTURE; GATE VOLTAGES; LOW VOLTAGES; THERMALLY ACTIVATED PROCESS; VOLTAGE DISTRIBUTION;

COERCIVE FORCE;

ELECTRIC FIELD EFFECTS;

EID: 84872308291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4774382     Document Type: Article

References (20)

1. M. Weisheit, S. Fähler, A. Marty, Y. Souche, C. Poinsignon, and D. Givord, Science 315, 349-351 (2007). 10.1126/science.1136629
2. T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, M. Mizuguchi, A. A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami, Y. Ando, and Y. Suzuki, Nat. Nanotechnol. 4, 158-161 (2009). 10.1038/nnano.2008.406
3. M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 96, 212503 (2010). 10.1063/1.3429592
4. D. Chiba, S. Fukami, K. Shimamura, N. Ishiwata, K. Kobayashi, and T. Ono, Nature Mater. 10, 853-856 (2011). 10.1038/nmat3130
5. W.-G. Wang, M. Li, S. Hageman, and C. L. Chien, Nature Mater. 11, 64-68 (2012) 10.1038/NMAT3171.
6. F. Bonell, S. Murakami, Y. Shiota, T. Nozaki, T. Shinjo, and Y. Suzuki, Appl. Phys. Lett. 98, 232510 (2011). 10.1063/1.3599492
7. G. H. O. Daalderop, P. J. Kelly, and M. F. H. Schuurmans, Phys. Rev. B 44, 12054 (1991). 10.1103/PhysRevB.44.12054
8. J. P. Attané, D. Ravelosona, A. Marty, Y. Samson, and C. Chappert, Phys. Rev. Lett. 96, 147204 (2006). 10.1103/PhysRevLett.96.147204
9. L. Herrera Diez, A. Bernand-Mantel, L. Ranno, D. Givord, L. Vila, P. Warin, and A. Marty, New J. Phys. 14, 113024 (2012). 10.1088/1367-2630/14/11/ 113024
10. D. Halley, A. Marty, P. Bayle-Guillemaud, B. Gilles, J. P. Attané, and Y. Samson, Phys. Rev. B 70, 174438 (2004). 10.1103/PhysRevB.70.174438
11. U. Bauer, M. Przybylski, J. Kirschner, and G. S. D. Beach, Nano Lett. 12, 1437 (2012). 10.1021/nl204114t
12. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
13. A. P. Mihai, F. Garcia-Sanchez, L. Vila, A. Marty, L. D. Buda-Prejbeanu, J. C. Pillet, C. Beigné, D. Ravelosona, C. Mannequin, J. C. Toussaint, and J. P. Attané, Phys. Rev. B 84, 014411 (2011). 10.1103/PhysRevB.84. 014411
14. N. A. Chowdhury, R. Garg, and D. Misraa, Appl. Phys. Lett. 85, 3289 (2004). 10.1063/1.1805708
15. H. Jin, M. Chenyue, Z. Lining, Z. Jian, and Z. Xing, J. Semicond. 30, 084003 (2009). 10.1088/1674-4926/30/8/084003
16. K. Xiong and J. Robertson, Microelectron. Eng. 80, 408 (2005). 10.1016/j.mee.2005.04.098
17. W. J. Zhu, T. P. Ma, S. Zafar, and T. Tamagawa, IEEE Electron Device Lett. 23, 597 (2002). 10.1109/LED.2002.804029
18. J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee, Appl. Phys. Lett. 89, 082908 (2006). 10.1063/1.2236466
19. M. Jo, H. Park, M. Chang, H.-S. Jung, J.-H. Lee, and H. Hwang, Microelectron. Eng. 84, 1934 (2007). 10.1016/j.mee.2007.04.025
20. T. Seki, M. Kohda, J. Nitta, and K. Takanashi, Appl. Phys. Lett. 98, 212505 (2011). 10.1063/1.3595318