A pathway to type-I band alignment in Ge/Si core-shell nanowires

Journal of Physical Chemistry Letters

Volumn 4, Issue 1, 2013, Pages 121-126

  Kim, Jongseob ^a   Lee, Jung Hoon ^b   Hong, Ki Ha ^c  

^a SAMSUNG Electronics   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND STRUCTURE ENGINEERING; COMPRESSIVE STRAIN; CORE-SHELL NANOWIRES; ELECTRONIC BAND; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES CALCULATION; INDIRECT BAND GAP; LATTICE STRAIN; LOGIC APPLICATIONS; P-TYPE;

BAND STRUCTURE; CALCULATIONS; GERMANIUM; NANOWIRES; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS;

ALIGNMENT;

EID: 84872172657     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz301975v     Document Type: Article

References (42)

1. Cui, Y.; Zhong, Z.; Wang, D.; Wang, W. U.; Lieber, C. M. High Performance Silicon Nanowire Field Effect Transistors Nano Lett. 2003, 3, 149-152
2. Wang, D.; Sheriff, B. A.; Heath, J. R. Silicon p-FETs from Ultrahigh Density Nanowire Arrays Nano Lett. 2006, 6, 1096-1100
3. Liao, L.; Fan, H. J.; Yan, B.; Zhang, Z.; Chen, L. L.; Li, B. S.; Xing, G. Z.; Shen, Z. X.; Wu, T.; Sun, X. W. Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications ACS Nano 2009, 3, 700-706
4. Yan, R.; Gargas, D.; Yang, P. Nanowire Photonics Nat. Photonics 2009, 3, 569-576
5. Duan, X.; Huang, Y.; Agarwal, R.; Lieber, C. M. Single-Nanowire Electrically Driven Lasers Nature 2003, 421, 241-245
6. Takei, K.; Takahashi, T.; Ho, J. C.; Ko, H.; Gillies, A. G.; Leu, P. W.; Fearing, R. S.; Javey, A. Nanowire Active-Matrix Circuitry for Low-Voltage Macroscale Artificial Skin Nat. Mater. 2010, 9, 821-826
7. Takahashi, T.; Takei, K.; Adabi, E.; Fan, Z.; Niknejad, A. M.; Javey, A. Parallel Array InAs Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics ACS Nano 2010, 4, 5855-5860
8. Liu, N.; Hu, L.; McDowell, M. T.; Jackson, A.; Cui, Y. Prelithiated Silicon Nanowires as an Anode for Lithium Ion Batteries ACS Nano 2011, 5, 6487-6493
9. Kelzenberg, M. D.; Turner-Evans, D. B.; Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Lewis, N. S.; Atwater, H. A. Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells Nano Lett. 2008, 8, 710-714
10. Wang, Z. L.; Song, J. Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays Science 2006, 312, 243-246
11. Boukai, A. I.; Bunimovich, Y.; Tahir-Kheli, J.; Yu, J.-K.; Goddard, W. A., III; Heath, J. R. Silicon Nanowires as Efficient Thermoelectric Materials Nature 2008, 451, 168-171
12. Hong, K. H.; Kim, J.; Lee, S. H.; Shin, J. Strain-Driven Electronic Band Structure Modulation of Si Nanowires Nano Lett. 2008, 8, 1335-1340
13. Rurali, R. Colloquium: Structural, Electronic, and Transport Properties of Silicon Nanowires Rev. Mod. Phys. 2010, 82, 427-449
14. Lu, W.; Lieber, C. M. Nanoelectronics from the Bottom Up Nat. Mater. 2007, 6, 841-850
15. Hong, K.-H.; Kim, J.; Lee, J. H.; Shin, J.; Chung, U.-I. Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds Nano Lett. 2010, 10, 1671-1676
16. Zhang, S.; Hemesath, E. R.; Perea, D. E.; Wijaya, E.; Lensch-Falk, J. L.; Lauhon, L. J. Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires Nano Lett. 2009, 9, 3268-3274
17. Björk, M. T.; Schmid, H.; Knoch, J.; Riel, H.; Riess, W. Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires Nat. Nanotechnol. 2009, 4, 103-107
18. Kamata, Y. High-k/Ge MOSFETs for Future Nanoelectronics Mater. Today 2008, 11, 30-38
19. Pillarisetty, R. Academic and Industry Research Progress in Germanium Nanodevices Nature 2011, 479, 324-328
20. Wang, J.; Rahman, A.; Klimeck, G.; Lundstrom, M. Bandstructure and Orientation Effects in Ballistic Si and Ge Nanowire FETs IEDM Tech. Dig. 2005, 533-536
21. Shang, H.; Frank, M. M.; Gusev, E. P.; Chu, J. O.; Bedell, S. W.; Guarini, K. W.; Ieong, M. Germanium Channel MOSFETs: Opportunities and Challenges IBM J. Res. Dev. 2006, 50, 377-386
22. Lauhon, L. J.; Gudiksen, M. S.; Wang, D.; Lieber, C. M. Epitaxial Core-Shell and Core-Multishell Nanowire Heterostructures Nature 2002, 420, 57-61
23. Zhang, P.; Ding, Y.; Zhang, Y.; Zhang, X.; Wang, Z. L. Piezo-phototronic Effect Enhanced Visible and Ultraviolet Photodetection Using a ZnO-CdS Core-Shell Micro/Nanowire ACS Nano 2012, 6, 9229-9236
24. Tsai, S.-H.; Chang, H.-C.; Wang, H.-H.; Chen, S.-Y.; Lin, C.-A.; Chen, S.-A.; Chueh, Y.-L.; He, J.-H. Significant Efficiency Enhancement of Hybrid Solar Cells Using Core-Shell Nanowire Geometry for Energy Harvesting ACS Nano 2011, 5, 9501-9510
25. Tang, J.; Huo, Z.; Brittman, S.; Gao, H.; Yang, P. Solution-Processed Core-Shell Nanowires for Efficient Photovoltaic Cells Nat. Nanotechnol. 2011, 6, 568-572
26. Xiang, J.; Lu, W.; Hu, Y.; Wu, Y.; Yan, H.; Lieber, C. M. Ge/Si Nanowire Heterostructures as High-Performance Field-Effect Transistors Nature 2006, 441, 489-493
27. Hu, Y.; Xiang, J.; Liang, G.; Hao, Y.; Lieber, C. M. Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed Nano Lett. 2008, 8, 925-930
28. Lee, H.; Choi, H. J. Single-Impurity Scattering and Carrier Mobility in Doped Ge/Si Core-Shell Nanowires Nano Lett. 2010, 10, 2207-2210
29. Liang, G.; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C. M.; Lundstrom, M. Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor Nano Lett. 2007, 7, 642-646
30. Park, J.-S.; Ryu, B.; Moon, C. -Y.; Chang, K. J. Defects Responsible for the Hole Gas in Ge/Si Core-Shell Nanowires Nano Lett. 2010, 10, 116-121
31. Niquet, Y. M.; Lherbier, A.; Quang, N. H.; Fernández-Serra, M. V.; Blase, X.; Delerue, C. Electronic Structure of Semiconductor Nanowires Phys. Rev. B 2006, 73, 165319
32. Logan, P.; Peng, X. Strain-Modulated Electronic Properties of Ge Nanowires: A First-Principles Study Phys. Rev. B 2009, 80, 115322
33. Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set Phys. Rev. B 1996, 54, 11169-11186
34. Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B 1999, 59, 1758-1775
35. Blochl, P. E. Projector Augmented-Wave Method Phys. Rev. B 1994, 50, 17953-17979
36. Yang, L.; Musin, R. N.; Wang, X.-Q.; Chou, M. Y. Quantum Confinement Effect in Si/Ge Core-Shell Nanowires: First-Principles Calculations Phys. Rev. B 2008, 77, 195325
37. Pekoz, R.; Raty, J.-Y. From Bare Ge Nanowire to Ge/Si Core/Shell Nanowires: A First-Principles Study Phys. Rev. B 2009, 80, 155432
38. Harris, C.; O'Reilly Nature of the Band Gap of Silicon and Germanium Nanowires Physica E 2006, 32, 341-345
39. Peng, X.-H.; Ganti, S.; Alizadeh, A.; Sharma, P.; Kumar, S. K.; Nayak, S. K. Strain-Engineered Photoluminescence of Silicon Nanoclusters Phys. Rev. B 2006, 74, 035339
40. Peng, X.; Logan, P. Electronic Properties of Strained Si/Ge core-shell Nanowires Appl. Phys. Lett. 2010, 96, 143119
41. Musin, R. N.; Wang, X.-Q. Structural and Electronic Properties of Epitaxial Core-Shell Nanowire Heterostructures Phys. Rev. B 2005, 71, 155318
42. Musin, R. N.; Wang, X.-Q. Quantum Size Effect in Core-Shell Structured Silicon-Germanium Nanowires Phys. Rev. B 2006, 74, 165308