Identification of an intrinsic source of doping inhomogeneity in vapor-liquid-solid-grown nanowires

Nano Letters

Volumn 13, Issue 1, 2013, Pages 199-206

  Connell, Justin G ^a   Yoon, Kunho ^a   Perea, Daniel E ^a,b   Schwalbach, Edwin J ^a,c   Voorhees, Peter W ^a   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

atom probe tomography; doping; Nanowire; semiconductor; synthesis

Indexed keywords

ATOM PROBE; ATOM PROBE TOMOGRAPHY; AU CATALYSTS; B-DOPED SI; DOPANT CONCENTRATIONS; DOPING CONTROL; GROWTH PROCESS; INHOMOGENEITIES; LIQUID-SOLID INTERFACES; LOW-DIMENSIONAL MATERIALS; NANOWIRE GROWTH; SEMICONDUCTOR NANOWIRE; SI AND GE NANOWIRES; TOMOGRAPHIC; VAPOR-LIQUID-SOLID PROCESS;

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GERMANIUM; LIQUIDS; NANOWIRES; PHOSPHORUS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON; SYNTHESIS (CHEMICAL); VAPORS;

PHASE INTERFACES;

EID: 84872104123     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3038695     Document Type: Article

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