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Volumn 95, Issue 6, 2009, Pages

Doping nanowires grown by the vapor-liquid-solid mechanism

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST COMPOSITION; DOPANT ATOMS; DOPANT COMPOSITION; FUNCTIONAL DEVICES; LIQUID CONTROL; LOCAL EQUILIBRIUM; MOLE FRACTION; SEMICONDUCTOR NANOWIRE; SOLID WIRES; STEADY STATE; TERNARY SEMICONDUCTORS; UPPER LIMITS; VAPOR-LIQUID-SOLID GROWTH; VAPOR-LIQUID-SOLID MECHANISM;

EID: 69049098979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204543     Document Type: Article
Times cited : (16)

References (21)
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  • 2
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  • 9
    • 33846480471 scopus 로고    scopus 로고
    • 0163-1829,. 10.1103/PhysRevB.75.045335
    • V. Schmidt, S. Senz, and U. Gösele, Phys. Rev. B 0163-1829 75, 045335 (2007). 10.1103/PhysRevB.75.045335
    • (2007) Phys. Rev. B , vol.75 , pp. 045335
    • Schmidt, V.1    Senz, S.2    Gösele, U.3
  • 11
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    • M. J. Aziz and T. Kaplan, Acta Metall. 0001-6160 36, 2335 (1988). 10.1016/0001-6160(88)90333-1
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  • 21
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    • Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires
    • DOI 10.1103/PhysRevLett.96.096105, 096105
    • S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, Phys. Rev. Lett. 0031-9007 96, 096105 (2006). 10.1103/PhysRevLett.96.096105 (Pubitemid 43385030)
    • (2006) Physical Review Letters , vol.96 , Issue.9 , pp. 1-4
    • Kodambaka, S.1    Tersoff, J.2    Reuter, M.C.3    Ross, F.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.