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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

(5) Le, Son T a Jannaty, P a Zaslavsky, A a Dayeh, S A b Picraux, S T b

a Brown University (United States)

b LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; BAND TO BAND TUNNELING; ELECTRICAL PROPERTY; FOUR-POINT MEASUREMENTS; GATE CONTROL; GERMANIUM NANOWIRES; IN-SITU; P-N JUNCTION; REVERSE-BIAS; ROOM TEMPERATURE; SUB-100 NM; THREE ORDERS OF MAGNITUDE; VAPOR-LIQUID-SOLID GROWTH;

DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRIC WIRE; GERMANIUM; NANOWIRES; SEMICONDUCTOR JUNCTIONS;

ELECTRIC RECTIFIERS;

EID: 77954343271 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457862 Document Type: Article

Times cited : (21)

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