Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 327-332

  Mejia, Israel ^a   Salas Villasenor, Ana L ^a   Cha, Dongkyu ^b   Alshareef, Husam N ^b   Gnade, Bruce E ^a   Quevedo Lopez, Manuel A ^a  

^a The University of Texas at Dallas   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Cadmium sulfide (CdS); contact resistance; high mobility; photolithography; thin film transistor (TFT)

Indexed keywords

CDS; FIELD-EFFECT MOBILITIES; FOUR MASK; HIGH MOBILITY; INTEGRATION PROCESS; POST DEPOSITION ANNEALING; PROCESSING TEMPERATURE; SEMICONDUCTOR THICKNESS; SOURCE-DRAIN CONTACTS; THIN-FILM TRANSISTOR (TFTS);

CADMIUM COMPOUNDS; CONTACT RESISTANCE; ELECTRON ENERGY LOSS SPECTROSCOPY; PHOTOLITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

CADMIUM SULFIDE;

EID: 84871801456     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2228200     Document Type: Article

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