Cadmium sulfide thin-film transistors fabricated by low-temperature chemical-bath deposition

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5819-5823

  Voss, C ^a,b   Subramanian, S ^a,b   Chang, C H ^a  

^a Oregon State University   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DEVICES; CHEMICAL-BATH DEPOSITION; DRAIN VOLTAGE;

CADMIUM; CAPACITANCE; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; MASS TRANSFER; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; PEROVSKITE; SILICON WAFERS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 9944236401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804244     Document Type: Article

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