Impact of gate dielectric in carrier mobility in low temperature chalcogenide thin film transistors for flexible electronics

Electrochemical and Solid-State Letters

Volumn 13, Issue 9, 2010, Pages

  Salas Villasenor, A L ^a   Mejia, I ^a   Hovarth, J ^a   Alshareef, H N ^b   Cha, D K ^b   Ramirez Bon, R ^c   Gnade, B E ^a   Quevedo Lopez, M A ^a  

^a The University of Texas at Dallas   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS FILMS; CDS THIN FILMS; CHALCOGENIDE THIN FILMS; CHANNEL LENGTH; CHEMICAL-BATH DEPOSITION; COMMON-GATE TRANSISTOR; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; HEXAGONAL CRYSTALLINE; LOW TEMPERATURES; NUCLEATION AND GROWTH; SHADOW MASK; SOURCE AND DRAINS; THERMAL-ANNEALING; TOP CONTACT;

CADMIUM; CADMIUM COMPOUNDS; CADMIUM SULFIDE; DEPOSITION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PHASE CHANGE MEMORY; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

CARRIER MOBILITY;

EID: 77954721909     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3456551     Document Type: Article

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